Inventor
LIN MEI-HSUAN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “LIN MEI-HSUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LIN MEI-HSUAN
7 patentsUS8533639B2Sep 10, 2013
Optical proximity correction for active region design layout
LIN MEI-HSUAN7 citations81
US8994097B2Mar 31, 2015
MOS devices having non-uniform stressor doping
LIN MEI-HSUAN2 citations61
US8513143B2Aug 20, 2013
Semiconductor structure and method of manufacturing
LIN MEI-HSUAN2 citations61
US9343318B2May 17, 2016
Salicide formation using a cap layer
LIN MEI-HSUAN0 citations51
US8846492B2Sep 30, 2014
Integrated circuit having a stressor and method of forming the same
LIN MEI-HSUAN0 citations51
US8470660B2Jun 25, 2013
Method of manufacturing a semiconductor device
LIN MEI-HSUAN1 citations51
US8527915B2Sep 3, 2013
Method and system for modifying doped region design layout during mask preparation to tune device performance
LIN MEI-HSUAN0 citations40
TAIWAN SEMICONDUCTOR MFG
5 patentsUS8775982B2Jul 8, 2014
Optical proximity correction for active region design layout
TAIWAN SEMICONDUCTOR MFG2 citations60
US9209270B2Dec 8, 2015
MOS devices having non-uniform stressor doping
TAIWAN SEMICONDUCTOR MFG0 citations51
US9024391B2May 5, 2015
Semiconductor structure having stressor
TAIWAN SEMICONDUCTOR MFG0 citations51
US8836088B2Sep 16, 2014
Semiconductor structure having etch stop layer
TAIWAN SEMICONDUCTOR MFG0 citations51
US8765545B2Jul 1, 2014
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG1 citations51
TAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS12154808B2Nov 26, 2024
System and method for wafer manufacturing process management
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US9978604B2May 22, 2018
Salicide formation using a cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US12529567B2Jan 20, 2026
Method of performing inter-site backup processing of wafer lots
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50