P

Inventor

BI LEI

US32 patents
⚠️ This page may combine multiple inventors who share the name “BI LEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

14 patents
US10242989B2Mar 26, 2019

Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods

MICRON TECHNOLOGY INC8 citations84
US10090462B2Oct 2, 2018

Resistive memory devices

MICRON TECHNOLOGY INC2 citations73
US10062432B2Aug 28, 2018

Resistive memory sensing

MICRON TECHNOLOGY INC2 citations73
US9507104B2Nov 29, 2016

Apparatus providing simplified alignment of optical fiber in photonic integrated circuits

MICRON TECHNOLOGY INC3 citations73
US9360627B2Jun 7, 2016

Method and apparatus providing compensation for wavelength drift in photonic structures

MICRON TECHNOLOGY INC3 citations73
US9715070B2Jul 25, 2017

Apparatus providing simplified alignment of optical fiber in photonic integrated circuits

MICRON TECHNOLOGY INC1 citations63
US9341787B2May 17, 2016

Apparatus providing simplified alignment of optical fiber in photonic integrated circuits

MICRON TECHNOLOGY INC2 citations63
US8633084B1Jan 21, 2014

Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion

MICRON TECHNOLOGY INC2 citations62
US10699784B2Jun 30, 2020

Resistive memory sensing

MICRON TECHNOLOGY INC0 citations52
US10656354B2May 19, 2020

Apparatus providing simplified alignment of optical fiber in photonic integrated circuits

MICRON TECHNOLOGY INC0 citations52
US9958624B2May 1, 2018

Apparatus providing simplified alignment of optical fiber in photonic integrated circuits

MICRON TECHNOLOGY INC0 citations52
US9058875B2Jun 16, 2015

Resistive memory sensing

MICRON TECHNOLOGY INC0 citations52
US9324943B2Apr 26, 2016

Filamentary memory devices and methods

MICRON TECHNOLOGY INC0 citations51
US8809157B2Aug 19, 2014

Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion

MICRON TECHNOLOGY INC0 citations51

BI LEI

3 patents

FORTIOR TECH SHENZHEN CO LTD

3 patents

RAMASWAMY DURAI VISHAK NIRMAL

2 patents

UNIV ELECTRONIC SCI & TECH CHINA

2 patents

MASSACHUSETTS INST TECHNOLOGY

1 patent

NXP BV

1 patent

KIMERLING LIONEL C

1 patent

FORTIOR TECH (SHEN-ZHEN) CO LTD

1 patent

INST DATA STORAGE

1 patent

PU TIANYAN

1 patent

UNIV GUANGDONG OCEAN

1 patent

BEIJING JINGDONG SHANGKE INFORMATION TECHNOLOGY CO LTD

1 patent