P

Inventor

INOUE KAORU

JP129 patents
⚠️ This page may combine multiple inventors who share the name “INOUE KAORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

30 patents
US5510758AApr 23, 1996

Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD269 citations99
US6639255B2Oct 28, 2003

GaN-based HFET having a surface-leakage reducing cap layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US7422825B2Sep 9, 2008

Nonaqueous electrolyte secondary battery

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD67 citations97
US7078743B2Jul 18, 2006

Field effect transistor semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations96
US5296719AMar 22, 1994

Quantum device and fabrication method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51 citations96
US5872393AFeb 16, 1999

RF semiconductor device and a method for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD71 citations95
US6555268B1Apr 29, 2003

Negative electrode for secondary cell, negative plate for secondary cell, and secondary cell comprising the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD74 citations94
US7419743B2Sep 2, 2008

Cylindrical lithium battery resistant to breakage of the porous heat resistant layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD49 citations93
US7378185B2May 27, 2008

Prismatic lithium secondary battery having a porous heat resistant layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD49 citations93
US7339207B2Mar 4, 2008

Semiconductor device including a group III-V nitride semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations93
US6737683B2May 18, 2004

Semiconductor device composed of a group III-V nitride semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations93
US6506520B1Jan 14, 2003

Non-aqueous electrolyte secondary battery

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51 citations93
US6787820B2Sep 7, 2004

Hetero-junction field effect transistor having an InGaAIN cap film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD39 citations92
US6774449B1Aug 10, 2004

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations92
US6531718B2Mar 11, 2003

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6348282B1Feb 19, 2002

Non-Aqueous electrolyte secondary batteries

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD41 citations92
US5429957AJul 4, 1995

Method of manufacturing an heterojunction bipolar transistor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US5371389ADec 6, 1994

Heterojunction bipolar transistor with base layer having graded bandgap

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US6436573B1Aug 20, 2002

Non-aqueous electrolyte secondary cell, negative electrode therefor, and method of producing negative electrode

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations91
US6153499ANov 28, 2000

Method of manufacturing semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations84
US7285806B2Oct 23, 2007

Semiconductor device having an active region formed from group III nitride

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations81
US4185291AJan 22, 1980

Junction-type field effect transistor and method of making the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations80
US6933181B2Aug 23, 2005

Method for fabricating semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6924516B2Aug 2, 2005

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6809352B2Oct 26, 2004

Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations74
US6770922B2Aug 3, 2004

Semiconductor device composed of a group III-V nitride semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations74
US6593193B2Jul 15, 2003

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US5289020AFeb 22, 1994

Heterojunction bipolar transistor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6667132B2Dec 23, 2003

Non-aqueous electrolyte secondary batteries

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations73
US6114065ASep 5, 2000

Secondary battery

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations73

PANASONIC CORP

2 patents

TOYO TIRE & RUBBER CO

2 patents

MITSUI TOATSU CHEMICALS

2 patents

TOSHIBA KK

2 patents

UBE INDUSTRIES

2 patents

FUJITSU LTD

1 patent

MATSUSHITA ELECTRONICS CORP

1 patent

NIPPON SYNTHETIC CHEM IND

1 patent

JAPAN TOBACCO INC

1 patent

NIPPON SYNTHETIC CHEM IND CO LTD

1 patent

TOSHIBA MATSUSHITA DISPLAY TEC

1 patent

MITSUI CHEMICALS INC

1 patent

JAPAN DISPLAY INC

1 patent

SHIBUTANI MITSUO

1 patent

TOYOTA MOTOR CO LTD

1 patent

Showing the top 50 of 129 patents by PatentIndex Score.