Inventor
INOUE KAORU
JP129 patents
⚠️ This page may combine multiple inventors who share the name “INOUE KAORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
30 patentsUS5510758AApr 23, 1996
Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD269 citations99
US6639255B2Oct 28, 2003
GaN-based HFET having a surface-leakage reducing cap layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US7422825B2Sep 9, 2008
Nonaqueous electrolyte secondary battery
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD67 citations97
US7078743B2Jul 18, 2006
Field effect transistor semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations96
US5296719AMar 22, 1994
Quantum device and fabrication method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51 citations96
US5872393AFeb 16, 1999
RF semiconductor device and a method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD71 citations95
US6555268B1Apr 29, 2003
Negative electrode for secondary cell, negative plate for secondary cell, and secondary cell comprising the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD74 citations94
US7419743B2Sep 2, 2008
Cylindrical lithium battery resistant to breakage of the porous heat resistant layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD49 citations93
US7378185B2May 27, 2008
Prismatic lithium secondary battery having a porous heat resistant layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD49 citations93
US7339207B2Mar 4, 2008
Semiconductor device including a group III-V nitride semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations93
US6737683B2May 18, 2004
Semiconductor device composed of a group III-V nitride semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations93
US6506520B1Jan 14, 2003
Non-aqueous electrolyte secondary battery
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD51 citations93
US6787820B2Sep 7, 2004
Hetero-junction field effect transistor having an InGaAIN cap film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD39 citations92
US6774449B1Aug 10, 2004
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations92
US6531718B2Mar 11, 2003
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6348282B1Feb 19, 2002
Non-Aqueous electrolyte secondary batteries
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD41 citations92
US5429957AJul 4, 1995
Method of manufacturing an heterojunction bipolar transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US5371389ADec 6, 1994
Heterojunction bipolar transistor with base layer having graded bandgap
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US6436573B1Aug 20, 2002
Non-aqueous electrolyte secondary cell, negative electrode therefor, and method of producing negative electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations91
US6153499ANov 28, 2000
Method of manufacturing semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations84
US7285806B2Oct 23, 2007
Semiconductor device having an active region formed from group III nitride
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations81
US4185291AJan 22, 1980
Junction-type field effect transistor and method of making the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations80
US6933181B2Aug 23, 2005
Method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6924516B2Aug 2, 2005
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6809352B2Oct 26, 2004
Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations74
US6770922B2Aug 3, 2004
Semiconductor device composed of a group III-V nitride semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations74
US6593193B2Jul 15, 2003
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US5289020AFeb 22, 1994
Heterojunction bipolar transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6667132B2Dec 23, 2003
Non-aqueous electrolyte secondary batteries
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations73
US6114065ASep 5, 2000
Secondary battery
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations73
PANASONIC CORP
2 patentsUS7682751B2Mar 23, 2010
Lithium ion secondary battery and charging method therefor, and charge or charge/discharge control system for lithium ion secondary battery
PANASONIC CORP53 citations97
US7892677B2Feb 22, 2011
Negative electrode for non-aqueous electrolyte secondary batteries, and non-aqueous electrolyte secondary battery having the same
PANASONIC CORP8 citations83
TOYO TIRE & RUBBER CO
2 patentsMITSUI TOATSU CHEMICALS
2 patentsTOSHIBA KK
2 patentsUBE INDUSTRIES
2 patentsFUJITSU LTD
1 patentMATSUSHITA ELECTRONICS CORP
1 patentNIPPON SYNTHETIC CHEM IND
1 patentJAPAN TOBACCO INC
1 patentNIPPON SYNTHETIC CHEM IND CO LTD
1 patentTOSHIBA MATSUSHITA DISPLAY TEC
1 patentMITSUI CHEMICALS INC
1 patentJAPAN DISPLAY INC
1 patentSHIBUTANI MITSUO
1 patentTOYOTA MOTOR CO LTD
1 patentShowing the top 50 of 129 patents by PatentIndex Score.