Inventor
YU XIANXIAN
CN2 patents
Patents
2 patentsUS9856572B2Jan 2, 2018
Additive for reducing voids after annealing of copper plating with through silicon via
SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD0 citations45
US9915005B2Mar 13, 2018
Additive C capable of changing microvia-filling method by TSV copper plating, and electroplating solution containing same
SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD0 citations34