Inventor
YOON HYUNGSUK ALEXANDER
US36 patents
⚠️ This page may combine multiple inventors who share the name “YOON HYUNGSUK ALEXANDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
13 patentsUS7615480B2Nov 10, 2009
Methods of post-contact back end of the line through-hole via integration
LAM RES CORP22 citations93
US7651585B2Jan 26, 2010
Apparatus for the removal of an edge polymer from a substrate and methods therefor
LAM RES CORP27 citations92
US8026605B2Sep 27, 2011
Interconnect structure and method of manufacturing a damascene structure
LAM RES CORP8 citations84
US7662253B2Feb 16, 2010
Apparatus for the removal of a metal oxide from a substrate and methods therefor
LAM RES CORP8 citations84
US7691278B2Apr 6, 2010
Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor
LAM RES CORP6 citations74
US7615486B2Nov 10, 2009
Apparatus and method for integrated surface treatment and deposition for copper interconnect
LAM RES CORP7 citations74
US9911660B2Mar 6, 2018
Methods for forming germanium and silicon germanium nanowire devices
LAM RES CORP3 citations69
US7749893B2Jul 6, 2010
Methods and systems for low interfacial oxide contact between barrier and copper metallization
LAM RES CORP3 citations63
US11923404B2Mar 5, 2024
Modifying ferroelectric properties of hafnium oxide with hafnium nitride layers
LAM RES CORP0 citations58
US11923189B2Mar 5, 2024
Capping layer for a hafnium oxide-based ferroelectric material
LAM RES CORP0 citations58
US8053355B2Nov 8, 2011
Methods and systems for low interfacial oxide contact between barrier and copper metallization
LAM RES CORP0 citations52
US7863179B2Jan 4, 2011
Methods of fabricating a barrier layer with varying composition for copper metallization
LAM RES CORP0 citations42
US7540935B2Jun 2, 2009
Plasma oxidation and removal of oxidized material
LAM RES CORP0 citations42
YOON HYUNGSUK ALEXANDER
9 patentsUS8916232B2Dec 23, 2014
Method for barrier interface preparation of copper interconnect
YOON HYUNGSUK ALEXANDER9 citations84
US8883027B2Nov 11, 2014
Methods for removing a metal oxide from a substrate
YOON HYUNGSUK ALEXANDER10 citations84
US8287647B2Oct 16, 2012
Apparatus and method for atomic layer deposition
YOON HYUNGSUK ALEXANDER12 citations84
US8127395B2Mar 6, 2012
Apparatus for isolated bevel edge clean and method for using the same
YOON HYUNGSUK ALEXANDER8 citations80
US8926789B2Jan 6, 2015
Apparatus for the removal of a fluorinated polymer from a substrate
YOON HYUNGSUK ALEXANDER4 citations73
US8623456B2Jan 7, 2014
Methods for atomic layer deposition
YOON HYUNGSUK ALEXANDER2 citations62
US8298433B2Oct 30, 2012
Methods for removing an edge polymer from a substrate
YOON HYUNGSUK ALEXANDER4 citations62
US9359673B2Jun 7, 2016
Apparatus and method for atomic layer deposition
YOON HYUNGSUK ALEXANDER0 citations52
US8058164B2Nov 15, 2011
Methods of fabricating electronic devices using direct copper plating
YOON HYUNGSUK ALEXANDER1 citations42
APPLIED MATERIALS INC
6 patentsUS6846516B2Jan 25, 2005
Multiple precursor cyclical deposition system
APPLIED MATERIALS INC197 citations98
US6809026B2Oct 26, 2004
Selective deposition of a barrier layer on a metal film
APPLIED MATERIALS INC92 citations97
US6596643B2Jul 22, 2003
CVD TiSiN barrier for copper integration
APPLIED MATERIALS INC60 citations96
US6958296B2Oct 25, 2005
CVD TiSiN barrier for copper integration
APPLIED MATERIALS INC40 citations93
US6218301B1Apr 17, 2001
Deposition of tungsten films from W(CO)6
APPLIED MATERIALS INC23 citations93
US7396565B2Jul 8, 2008
Multiple precursor cyclical deposition system
APPLIED MATERIALS INC33 citations92
BOYD JOHN
5 patentsUS9117860B2Aug 25, 2015
Controlled ambient system for interface engineering
BOYD JOHN5 citations72
US8673769B2Mar 18, 2014
Methods and apparatuses for three dimensional integrated circuits
BOYD JOHN2 citations62
US8519461B2Aug 27, 2013
Device with post-contact back end of line through-hole via integration
BOYD JOHN4 citations62
US8187968B2May 29, 2012
Methods of post-contact back end of line through-hole via integration
BOYD JOHN2 citations62
US8323460B2Dec 4, 2012
Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal
BOYD JOHN0 citations41
KOREA ADVANCED INST SCI & TECH
2 patentsUS9472675B2Oct 18, 2016
Method of manufacturing n-doped graphene and electrical component using NH4F, and graphene and electrical component thereby
KOREA ADVANCED INST SCI & TECH3 citations66
US10535514B2Jan 14, 2020
Method of sealing open pores on surface of porous dielectric material using iCVD process
KOREA ADVANCED INST SCI & TECH0 citations38