Inventor
ALBRECHT MARTIN G
US3 patents
Patents
3 patentsUS6984857B2Jan 10, 2006
Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
TEXAS INSTRUMENTS INC37 citations89
US7425512B2Sep 16, 2008
Method for etching a substrate and a device formed using the method
TEXAS INSTRUMENTS INC9 citations81
US7019352B2Mar 28, 2006
Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components
TEXAS INSTRUMENTS INC11 citations80