Inventor

KIM MYONG WOON

KR28 patents

⚠️ This page may combine multiple inventors who share the name “KIM MYONG WOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM MYONG WOON

DNF CO LTD

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same

Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Anti-glare glass and manufacturing method therefor

Polymer and composition containing same

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition

Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

SAMSUNG ELECTRONICS CO LTD

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Method of forming tin-containing material film and method of synthesizing a tin compound

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Organometallic precursors and methods of forming thin layers using the same

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

SAMSUNG CORNING PREC MAT CO

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same

PARK HYE-YOUNG

Germanium compound, semiconductor device fabricated using the same, and methods of forming the same

SAMSUNG CORNING PREC MAT CO LTD

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same