Inventor
LEE SANG DO
KR43 patents
⚠️ This page may combine multiple inventors who share the name “LEE SANG DO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DNF CO LTD
11 patentsUS9245740B2Jan 26, 2016
Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
DNF CO LTD18 citations83
US9809608B2Nov 7, 2017
Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same
DNF CO LTD4 citations72
US9586979B2Mar 7, 2017
Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
DNF CO LTD3 citations72
US10202407B2Feb 12, 2019
Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same
DNF CO LTD1 citations62
US12518963B2Jan 6, 2026
Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same
DNF CO LTD0 citations61
US11749522B2Sep 5, 2023
Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same
DNF CO LTD0 citations61
US11393676B2Jul 19, 2022
Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same
DNF CO LTD0 citations61
US11358974B2Jun 14, 2022
Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
DNF CO LTD0 citations61
US11319333B2May 3, 2022
Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same
DNF CO LTD0 citations60
US10894799B2Jan 19, 2021
Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same
DNF CO LTD1 citations60
US9916974B2Mar 13, 2018
Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition
DNF CO LTD1 citations51
SAMSUNG ELECTRONICS CO LTD
7 patentsUS7373146B2May 13, 2008
Method of cross-paging a hybrid access terminal supporting voice service and packet data service
SAMSUNG ELECTRONICS CO LTD19 citations92
US7616598B2Nov 10, 2009
System and method for coupling between mobile communication system and wireless local area network
SAMSUNG ELECTRONICS CO LTD9 citations84
US7907597B2Mar 15, 2011
Method and apparatus for providing voice and data services in a mobile communication system with various overlapped access networks
SAMSUNG ELECTRONICS CO LTD14 citations83
US7586876B2Sep 8, 2009
Handoff system and method between a wireless LAN and mobile communication network
SAMSUNG ELECTRONICS CO LTD15 citations81
US7260072B2Aug 21, 2007
Data push service system and method using a heterogeneous network
SAMSUNG ELECTRONICS CO LTD10 citations81
US6571448B2Jun 3, 2003
Apparatus for attaching sand papers on dummy wafers
SAMSUNG ELECTRONICS CO LTD7 citations72
US7372835B2May 13, 2008
Handoff system and method of dual mode mobile for connecting mobile communication system and wireless network
SAMSUNG ELECTRONICS CO LTD6 citations63
SK HYNIX INC
7 patentsUS10734389B2Aug 4, 2020
Semiconductor device and method for fabricating the same
SK HYNIX INC1 citations72
US10580777B2Mar 3, 2020
Semiconductor device and method for fabricating the same
SK HYNIX INC1 citations72
US10483265B2Nov 19, 2019
Semiconductor device and method for fabricating the same
SK HYNIX INC2 citations72
US11322501B2May 3, 2022
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations62
US11217592B2Jan 4, 2022
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations62
US9147595B2Sep 29, 2015
Semiconductor devices having buried metal silicide layers and methods of fabricating the same
SK HYNIX INC2 citations62
US9153654B2Oct 6, 2015
Semiconductor device with buried bit line and method for fabricating the same
SK HYNIX INC2 citations60
LEE SANG-DO
2 patentsJUSUNG ENG CO LTD
2 patentsHYNIX SEMICONDUCTOR INC
2 patentsUS6924229B2Aug 2, 2005
Method for forming a semiconductor device with a hard mask layer formed over a bit line to protect the bit line during subsequent etching steps
HYNIX SEMICONDUCTOR INC6 citations61
US7396772B2Jul 8, 2008
Method for fabricating semiconductor device having capacitor
HYNIX SEMICONDUCTOR INC6 citations57
SAMSUNG CORNING PREC MAT CO
2 patentsUS8932389B2Jan 13, 2015
Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
SAMSUNG CORNING PREC MAT CO0 citations48
US8858694B2Oct 14, 2014
Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same
SAMSUNG CORNING PREC MAT CO0 citations48