Inventor

LEE SANG ICK

KR52 patents

⚠️ This page may combine multiple inventors who share the name “LEE SANG ICK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE SANG ICK

DNF CO LTD

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same

Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Polymer and composition containing same

Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same

Iodine-containing metal compound and composition for depositing thin film including the same

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition

Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

HYNIX SEMICONDUCTOR INC

Method for forming polysilicon plug of semiconductor device

Method of forming a metal gate in a semiconductor device

Slurry composition with high planarity and CMP process of dielectric film using the same

Nitride CMP slurry having selectivity to nitride

Method of manufacturing semiconductor device

CMP slurry compositions for oxide films and methods for forming metal line contact plugs using the same

Method for forming capacitor of ferroelectric random access memory

SAMSUNG ELECTRONICS CO LTD

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Method of forming tin-containing material film and method of synthesizing a tin compound

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Organometallic precursors and methods of forming thin layers using the same

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

SK INNOVATION CO LTD

Separator for secondary battery, method for manufacturing the same and lithium secondary battery containing the same

Oligomerization catalyst and method for preparing ethylene oligomer using same

Oligomerization of ethylene

SABIC SK NEXLENE COMPANY PTE LTD

Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and alpha-olefin using the same

Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and alpha-olefin using the same

Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and alpha-olefin using the same

SHIN DONG CHEOL

Cyclopenta[b]fluorenyl transition metal compound, catalyst composition containing the same, and method of preparing ethylene homopolymer or copolymer of ethylene and α-olefin using the same

Method of preparing ethylene-α-olefin-diene copolymer

SAMSUNG CORNING PREC MAT CO

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same

KORCHIP CO LTD

High-voltage electric double layer capacitor

BAE SEOK MYOUNG

Remote electrical safety diagnosis system and apparatus

JEONG HAE-DO

Polishing pad for semiconductor and optical parts, and method for manufacturing the same

HYUNDAI ELECTRONICS IND

Method for the formation of gate electrode of semiconductor device using a difference in polishing selection ratio between polymer and oxide film

SAMSUNG CORNING PREC MAT CO LTD

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

SEUNG DO YOUNG

Negative electrode active material with improved safety, and secondary battery comprising same