Inventor

HSU TE-HSUN

TW24 patents

⚠️ This page may combine multiple inventors who share the name “HSU TE-HSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSU TE-HSUN

EMEMORY TECHNOLOGY INC

Non-volatile memory

Method of fabricating erasable programmable single-poly nonvolatile memory

Nonvolatile memory structure and fabrication method thereof

Highly scalable single-poly non-volatile memory cell

Nonvolatile memory structure

Method for manufacturing semiconductor structure and capable of controlling thicknesses of dielectric layers

Erasable programmable single-ploy nonvolatile memory

Non-volatile memory with protective stress gate

Erasable programmable single-ploy nonvolatile memory

TAIWAN SEMICONDUCTOR MFG

Logic compatible non-volatile memory cell

Logic non-volatile memory cell with improved data retention ability

Logic compatible storage device

Programmable non-volatile memory (PNVM) device

Architecture to monitor isolation integrity between floating gate and source line

Memory cell having a shared programming gate

Uniform channel programmable erasable flash EEPROM

HSU TE-HSUN

Erasable programmable single-ploy nonvolatile memory

Logic-based multiple time programming memory cell compatible with generic CMOS processes

Method of fabricating erasable programmable single-poly nonvolatile memory

CHEN WEI-REN

Erasable programmable single-ploy nonvolatile memory

Programming inhibit method of nonvolatile memory apparatus for reducing leakage current

TAIWAN SEMICONDCUTOR MFG COMPA

Logic compatible arrays and operations

TAIWAN SEMICONDUCTOR MANUFACTR

Scalable split-gate flash memory cell with high source-coupling ratio

IPCELL CORPORATION LTD

Memory device, integrated circuit and manufacturing method of the same