Inventor
WAN XIANJIN
CN13 patents
Patents
13 patentsUS10553604B2Feb 4, 2020
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD31 citations97
US11785776B2Oct 10, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations85
US10910397B2Feb 2, 2021
Through array contact structure of three- dimensional memory device
YANGTZE MEMORY TECH CO LTD5 citations83
US11956953B2Apr 9, 2024
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations72
US11545505B2Jan 3, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10886291B2Jan 5, 2021
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations72
US11177231B2Nov 16, 2021
Bonding contacts having capping layer and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations71
US10818631B2Oct 27, 2020
Semiconductor structure and method of forming the same
YANGTZE MEMORY TECH CO LTD3 citations69
US10811380B2Oct 20, 2020
Semiconductor structure and forming method thereof
YANGTZE MEMORY TECH CO LTD3 citations69
US12185550B2Dec 31, 2024
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11482532B2Oct 25, 2022
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11715718B2Aug 1, 2023
Bonding contacts having capping layer and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US12394751B2Aug 19, 2025
Method of forming semiconductor structure
YANGTZE MEMORY TECH CO LTD0 citations59