Inventor

ZHU HONGBIN

CN92 patents

⚠️ This page may combine multiple inventors who share the name “ZHU HONGBIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHU HONGBIN

MICRON TECHNOLOGY INC

Methods and apparatuses having memory cells including a monolithic semiconductor channel

Drain select gate formation methods and apparatus

Memory having a continuous channel

Method for selectively modifying spacing between pitch multiplied structures

Method for selectively modifying spacing between pitch multiplied structures

Integrated structures

Semiconductor devices and methods of fabrication

Semiconductor devices and methods of fabrication

Memory arrays and methods of fabricating integrated structure

Methods and apparatuses having memory cells including a monolithic semiconductor channel

Semiconductor devices and methods of fabrication

Integrated structures and methods of forming vertically-stacked memory cells

Semiconductor devices and semiconductor dice including electrically conductive interconnects between die rings

Memory having a continuous channel

Memory circuitry comprising a vertical string of memory cells and a conductive via and method used in forming a vertical string of memory cells and a conductive via

Memory having a continuous channel

Memory circuitry comprising a vertical string of memory cells and a conductive via and method used in forming a vertical string of memory cells and a conductive via

Methods of fabricating integrated structures

Memory arrays

Semiconductor constructions having multiple patterned masking layers over NAND gate stacks

Methods of forming NAND cell units with string gates of various widths

YANGTZE MEMORY TECH CO LTD

Three-dimensional memory devices having through array contacts and methods for forming the same

Interconnect structures of three-dimensional memory devices

Memory devices having vertical transistors and methods for forming the same

Memory devices having vertical transistors and methods for forming the same

Bonded memory device and fabrication methods thereof

Three-dimensional memory devices and methods for forming the same

Memory devices having vertical transistors and methods for forming the same

Three-dimensional memory devices having through array contacts and methods for forming the same

Three-dimensional memory device having multi-deck structure and methods for forming the same

Semiconductor structure and method of forming the same

Semiconductor structure and forming method thereof

Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer

Memory devices having vertical transistors and methods for forming the same

Memory devices having vertical transistors and methods for forming the same

Three-dimensional memory device having epitaxially-grown semiconductor channel and method for forming the same

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory device having epitaxially grown single crystalline silicon channel

Three-dimensional memory devices and methods for forming the same

Three-dimensional memory devices and methods for forming the same

INTEL CORP

Memory devices and systems having reduced bit line to drain select gate shorting and associated methods

Memory devices and systems having reduced bit line to drain select gate shorting and associated methods

Aluminum oxide landing layer for conductive channels for a three dimensional circuit device

Solid state memory device, and manufacturing method thereof

Electronic component guard ring

Electronic component guard ring

LIM CHAN

Methods of forming integrated circuitry comprising charge storage transistors

UNIV AUBURN

Method of synthesizing cubic boron nitride films

SHENZHEN YOLANDA TECH CO LTD

Body fat scale