P

Inventor

CHENG WEIHUA

CN28 patents
⚠️ This page may combine multiple inventors who share the name “CHENG WEIHUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

27 patents
US10593690B2Mar 17, 2020

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD21 citations94
US11562985B2Jan 24, 2023

Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD12 citations86
US11430766B2Aug 30, 2022

Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD6 citations86
US11158604B2Oct 26, 2021

Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same

YANGTZE MEMORY TECH CO LTD8 citations84
US11024600B2Jun 1, 2021

Unified semiconductor devices having programmable logic device and heterogeneous memories and methods for forming the same

YANGTZE MEMORY TECH CO LTD8 citations84
US10923491B2Feb 16, 2021

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD4 citations84
US11758732B2Sep 12, 2023

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations73
US11749641B2Sep 5, 2023

Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same

YANGTZE MEMORY TECH CO LTD3 citations73
US11721668B2Aug 8, 2023

Bonded semiconductor devices having programmable logic device and dynamic random-access memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD3 citations73
US11527547B2Dec 13, 2022

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations73
US11302706B2Apr 12, 2022

Bonded unified semiconductor chips and fabrication and operation methods thereof

YANGTZE MEMORY TECH CO LTD4 citations73
US11302700B2Apr 12, 2022

Bonded semiconductor devices having programmable logic device and NAND flash memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US10818631B2Oct 27, 2020

Semiconductor structure and method of forming the same

YANGTZE MEMORY TECH CO LTD3 citations69
US10811380B2Oct 20, 2020

Semiconductor structure and forming method thereof

YANGTZE MEMORY TECH CO LTD3 citations69
US10790297B2Sep 29, 2020

Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer

YANGTZE MEMORY TECH CO LTD4 citations68
US12451462B2Oct 21, 2025

Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12137568B2Nov 5, 2024

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US12002788B2Jun 4, 2024

Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11996389B2May 28, 2024

Bonded semiconductor devices having programmable logic device and dynamic random-access memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11864367B2Jan 2, 2024

Bonded semiconductor devices having processor and NAND flash memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations62
US11694993B2Jul 4, 2023

Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11631688B2Apr 18, 2023

Bonded unified semiconductor chips and fabrication and operation methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11367729B2Jun 21, 2022

Bonded semiconductor devices having processor and NAND flash memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations62
US12394751B2Aug 19, 2025

Method of forming semiconductor structure

YANGTZE MEMORY TECH CO LTD0 citations59
US11711913B2Jul 25, 2023

Bonded semiconductor devices having programmable logic device and NAND flash memory and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12089405B2Sep 10, 2024

Three-dimensional memory devices with channel structures having plum blossom shape

YANGTZE MEMORY TECH CO LTD0 citations51
US11877449B2Jan 16, 2024

Methods for forming three-dimensional memory devices with channel structures having plum blossom shape

YANGTZE MEMORY TECH CO LTD0 citations51

WUHAN XINXIN SEMICONDUCTOR MFG

1 patent