Inventor
MEUL HANS-WILLI
DE7 patents
Patents
7 patentsUS5188977AFeb 23, 1993
Method for manufacturing an electrically conductive tip composed of a doped semiconductor material
SIEMENS AG59 citations95
US5402002AMar 28, 1995
Bipolar transistor with reduced base/collector capacitance
SIEMENS AG20 citations92
US5326718AJul 5, 1994
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG33 citations92
US5498567AMar 12, 1996
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG16 citations82
US5422303AJun 6, 1995
Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
SIEMENS AG17 citations82
US5177582AJan 5, 1993
CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
SIEMENS AG17 citations73
US4829015AMay 9, 1989
Method for manufacturing a fully self-adjusted bipolar transistor
SIEMENS AG19 citations72