Inventor
KANNAN BALAJI
IN36 patents
⚠️ This page may combine multiple inventors who share the name “KANNAN BALAJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
14 patentsUS9748145B1Aug 29, 2017
Semiconductor devices with varying threshold voltage and fabrication methods thereof
GLOBALFOUNDRIES INC494 citations99
US10332747B1Jun 25, 2019
Selective titanium nitride deposition using oxides of lanthanum masks
GLOBALFOUNDRIES INC287 citations97
US9741720B1Aug 22, 2017
Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices
GLOBALFOUNDRIES INC22 citations94
US9484427B2Nov 1, 2016
Field effect transistors having multiple effective work functions
GLOBALFOUNDRIES INC7 citations84
US10020202B2Jul 10, 2018
Fabrication of multi threshold-voltage devices
GLOBALFOUNDRIES INC2 citations73
US9449887B2Sep 20, 2016
Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance
GLOBALFOUNDRIES INC3 citations73
US10170373B2Jan 1, 2019
Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme
GLOBALFOUNDRIES INC1 citations62
US9691662B2Jun 27, 2017
Field effect transistors having multiple effective work functions
GLOBALFOUNDRIES INC0 citations52
US10658363B2May 19, 2020
Cut inside replacement metal gate trench to mitigate N-P proximity effect
GLOBALFOUNDRIES INC0 citations49
US10446550B2Oct 15, 2019
Cut inside replacement metal gate trench to mitigate N-P proximity effect
GLOBALFOUNDRIES INC0 citations49
US10062618B2Aug 28, 2018
Method and structure for formation of replacement metal gate field effect transistors
GLOBALFOUNDRIES INC0 citations42
US10727133B2Jul 28, 2020
Method of forming gate structure with undercut region and resulting device
GLOBALFOUNDRIES INC0 citations41
US9418995B2Aug 16, 2016
Method and structure for transistors using gate stack dopants with minimal nitrogen penetration
GLOBALFOUNDRIES INC0 citations41
US10741668B2Aug 11, 2020
Short channel and long channel devices
GLOBALFOUNDRIES INC0 citations40
IBM
10 patentsUS9613866B2Apr 4, 2017
Gate stack formed with interrupted deposition processes and laser annealing
IBM11 citations92
US9613870B2Apr 4, 2017
Gate stack formed with interrupted deposition processes and laser annealing
IBM13 citations92
US9330938B2May 3, 2016
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
IBM12 citations92
US9515164B2Dec 6, 2016
Methods and structure to form high K metal gate stack with single work-function metal
IBM7 citations84
US9824930B2Nov 21, 2017
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
IBM3 citations73
US9997361B2Jun 12, 2018
Gate stack formed with interrupted deposition processes and laser annealing
IBM1 citations63
US9997610B2Jun 12, 2018
Gate stack formed with interrupted deposition processes and laser annealing
IBM1 citations63
US9721842B2Aug 1, 2017
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
IBM1 citations63
US10395993B2Aug 27, 2019
Methods and structure to form high K metal gate stack with single work-function metal
IBM1 citations62
US9472419B2Oct 18, 2016
Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme
IBM0 citations52
QUALCOMM INC
5 patentsUS11546396B1Jan 3, 2023
Prioritization of frames associated with recovery for video streaming session
QUALCOMM INC3 citations69
US11832336B2Nov 28, 2023
CDRX and IDRX collisions
QUALCOMM INC2 citations65
US10911998B2Feb 2, 2021
Scan optimization in enhancement machine type communication devices
QUALCOMM INC0 citations56
US10531367B2Jan 7, 2020
Techniques and apparatuses for handling extended access barring
QUALCOMM INC0 citations51
US11910363B2Feb 20, 2024
Resource sharing during communication pause
QUALCOMM INC0 citations47