P

Inventor

SHIN KYOUNG-SUB

KR41 patents
⚠️ This page may combine multiple inventors who share the name “SHIN KYOUNG-SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

22 patents
US6545306B2Apr 8, 2003

Semiconductor memory device with a connector for a lower electrode or a bit line

SAMSUNG ELECTRONICS CO LTD27 citations92
US6342416B1Jan 29, 2002

Method of manufacturing a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD35 citations92
US7265051B2Sep 4, 2007

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US6348375B1Feb 19, 2002

Method of fabricating a bit line structure for a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations84
US9214409B2Dec 15, 2015

Semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations83
US7988874B2Aug 2, 2011

Method of fabricating semiconductor device and synchronous pulse plasma etching equipment for the same

SAMSUNG ELECTRONICS CO LTD9 citations83
US7728375B2Jun 1, 2010

Semiconductor memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD10 citations83
US6350642B1Feb 26, 2002

Method of manufacturing semiconductor memory device including various contact studs

SAMSUNG ELECTRONICS CO LTD17 citations80
US6657192B1Dec 2, 2003

Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor

SAMSUNG ELECTRONICS CO LTD12 citations74
US10615080B2Apr 7, 2020

Methods of manufacturing semiconductor devices by etching active fins using etching masks

SAMSUNG ELECTRONICS CO LTD2 citations73
US5885756AMar 23, 1999

Methods of patterning a semiconductor wafer having an active region and a peripheral region, and patterned wafers formed thereby

SAMSUNG ELECTRONICS CO LTD9 citations66
US6974986B2Dec 13, 2005

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US6777341B2Aug 17, 2004

Method of forming a self-aligned contact, and method of fabricating a semiconductor device having a self-aligned contact

SAMSUNG ELECTRONICS CO LTD5 citations63
US12261087B2Mar 25, 2025

Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins

SAMSUNG ELECTRONICS CO LTD0 citations62
US11830775B2Nov 28, 2023

Methods of manufacturing semiconductor devices by etching active fins using etching masks

SAMSUNG ELECTRONICS CO LTD0 citations62
US11302585B2Apr 12, 2022

Methods of manufacturing semiconductor devices by etching active fins using etching masks

SAMSUNG ELECTRONICS CO LTD0 citations62
US9385134B2Jul 5, 2016

Semiconductor device and method forming patterns with spaced pads in trim region

SAMSUNG ELECTRONICS CO LTD2 citations62
US8003469B2Aug 23, 2011

Method of manufacturing non-volatile semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations62
US10109532B2Oct 23, 2018

Methods of manufacturing finFET semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US7145140B2Dec 5, 2006

Method of determining whether a conductive layer of a semiconductor device is exposed through a contact hold

SAMSUNG ELECTRONICS CO LTD0 citations52
US9806204B2Oct 31, 2017

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US10410839B2Sep 10, 2019

Method of processing a substrate using an ion beam and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD0 citations40

OH JUNG-IK

2 patents

SHIN KYOUNG-SUB

2 patents

LEE HAK-SUN

2 patents

YOON JUN-HO

2 patents

ZHANG GANG

1 patent

KIM HYUK

1 patent

KWON YONG-HYUN

1 patent

YOO JIN HYUK

1 patent

MIN JIN-HO

1 patent

KIM KI-JEONG

1 patent

AHN SUNG-SOO

1 patent

MI TECH CO LTD

1 patent

JEON YONG-HO

1 patent

PARK SANG WUK

1 patent

JEON KYUNG-YUB

1 patent