Inventor
SHIN KYOUNG-SUB
KR41 patents
⚠️ This page may combine multiple inventors who share the name “SHIN KYOUNG-SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS6545306B2Apr 8, 2003
Semiconductor memory device with a connector for a lower electrode or a bit line
SAMSUNG ELECTRONICS CO LTD27 citations92
US6342416B1Jan 29, 2002
Method of manufacturing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD35 citations92
US7265051B2Sep 4, 2007
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6348375B1Feb 19, 2002
Method of fabricating a bit line structure for a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations84
US9214409B2Dec 15, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations83
US7988874B2Aug 2, 2011
Method of fabricating semiconductor device and synchronous pulse plasma etching equipment for the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US7728375B2Jun 1, 2010
Semiconductor memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US6350642B1Feb 26, 2002
Method of manufacturing semiconductor memory device including various contact studs
SAMSUNG ELECTRONICS CO LTD17 citations80
US6657192B1Dec 2, 2003
Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus therefor
SAMSUNG ELECTRONICS CO LTD12 citations74
US10615080B2Apr 7, 2020
Methods of manufacturing semiconductor devices by etching active fins using etching masks
SAMSUNG ELECTRONICS CO LTD2 citations73
US5885756AMar 23, 1999
Methods of patterning a semiconductor wafer having an active region and a peripheral region, and patterned wafers formed thereby
SAMSUNG ELECTRONICS CO LTD9 citations66
US6974986B2Dec 13, 2005
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US6777341B2Aug 17, 2004
Method of forming a self-aligned contact, and method of fabricating a semiconductor device having a self-aligned contact
SAMSUNG ELECTRONICS CO LTD5 citations63
US12261087B2Mar 25, 2025
Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins
SAMSUNG ELECTRONICS CO LTD0 citations62
US11830775B2Nov 28, 2023
Methods of manufacturing semiconductor devices by etching active fins using etching masks
SAMSUNG ELECTRONICS CO LTD0 citations62
US11302585B2Apr 12, 2022
Methods of manufacturing semiconductor devices by etching active fins using etching masks
SAMSUNG ELECTRONICS CO LTD0 citations62
US9385134B2Jul 5, 2016
Semiconductor device and method forming patterns with spaced pads in trim region
SAMSUNG ELECTRONICS CO LTD2 citations62
US8003469B2Aug 23, 2011
Method of manufacturing non-volatile semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US10109532B2Oct 23, 2018
Methods of manufacturing finFET semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7145140B2Dec 5, 2006
Method of determining whether a conductive layer of a semiconductor device is exposed through a contact hold
SAMSUNG ELECTRONICS CO LTD0 citations52
US9806204B2Oct 31, 2017
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US10410839B2Sep 10, 2019
Method of processing a substrate using an ion beam and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD0 citations40