Inventor
YAMANE HISANORI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “YAMANE HISANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RICOH KK
9 patentsUS6592663B1Jul 15, 2003
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH KK167 citations99
US7261775B2Aug 28, 2007
Methods of growing a group III nitride crystal
RICOH KK22 citations92
US7250640B2Jul 31, 2007
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH KK14 citations92
US7001457B2Feb 21, 2006
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK31 citations92
US6949140B2Sep 27, 2005
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK49 citations92
US6780239B2Aug 24, 2004
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK40 citations92
US7531038B2May 12, 2009
Crystal growth method
RICOH KK9 citations84
US7508003B2Mar 24, 2009
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
RICOH KK8 citations84
US7828896B2Nov 9, 2010
Methods of growing a group III nitride crystal
RICOH KK4 citations63
SARAYAMA SEIJI
3 patentsUS8623138B2Jan 7, 2014
Crystal growth apparatus
SARAYAMA SEIJI2 citations62
US8591647B2Nov 26, 2013
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
SARAYAMA SEIJI1 citations62
US8562737B2Oct 22, 2013
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device
SARAYAMA SEIJI0 citations51