Inventor
SWAMINATHAN SHANKAR
US94 patents
⚠️ This page may combine multiple inventors who share the name “SWAMINATHAN SHANKAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
29 patentsUS9997357B2Jun 12, 2018
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
LAM RES CORP430 citations99
US9257274B2Feb 9, 2016
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
LAM RES CORP523 citations99
US9892917B2Feb 13, 2018
Plasma assisted atomic layer deposition of multi-layer films for patterning applications
LAM RES CORP55 citations98
US9373500B2Jun 21, 2016
Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
LAM RES CORP41 citations98
US9355839B2May 31, 2016
Sub-saturated atomic layer deposition and conformal film deposition
LAM RES CORP55 citations98
US10361076B2Jul 23, 2019
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
LAM RES CORP17 citations94
US10074543B2Sep 11, 2018
High dry etch rate materials for semiconductor patterning applications
LAM RES CORP33 citations94
US10043657B2Aug 7, 2018
Plasma assisted atomic layer deposition metal oxide for patterning applications
LAM RES CORP23 citations94
US9793110B2Oct 17, 2017
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
LAM RES CORP25 citations94
US9673041B2Jun 6, 2017
Plasma assisted atomic layer deposition titanium oxide for patterning applications
LAM RES CORP26 citations94
US9570290B2Feb 14, 2017
Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
LAM RES CORP29 citations94
US9508547B1Nov 29, 2016
Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
LAM RES CORP31 citations94
US9214334B2Dec 15, 2015
High growth rate process for conformal aluminum nitride
LAM RES CORP38 citations94
US9698042B1Jul 4, 2017
Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge
LAM RES CORP23 citations93
US9793096B2Oct 17, 2017
Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
LAM RES CORP16 citations92
US10559468B2Feb 11, 2020
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
LAM RES CORP13 citations86
US11133180B2Sep 28, 2021
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
LAM RES CORP6 citations84
US10741365B2Aug 11, 2020
Low volume showerhead with porous baffle
LAM RES CORP7 citations84
US10629435B2Apr 21, 2020
Doped ALD films for semiconductor patterning applications
LAM RES CORP9 citations84
US10407773B2Sep 10, 2019
Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
LAM RES CORP6 citations84
US10134579B2Nov 20, 2018
Method for high modulus ALD SiO2 spacer
LAM RES CORP13 citations84
US9617638B2Apr 11, 2017
Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
LAM RES CORP9 citations84
US10665429B2May 26, 2020
Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
LAM RES CORP6 citations83
US10378107B2Aug 13, 2019
Low volume showerhead with faceplate holes for improved flow uniformity
LAM RES CORP11 citations83
US11072860B2Jul 27, 2021
Fill on demand ampoule refill
LAM RES CORP6 citations82
US10403474B2Sep 3, 2019
Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
LAM RES CORP10 citations82
US12261038B2Mar 25, 2025
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
LAM RES CORP1 citations75
US11011379B2May 18, 2021
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
LAM RES CORP2 citations73
US10529557B2Jan 7, 2020
Systems and methods for UV-based suppression of plasma instability
LAM RES CORP2 citations73
NOVELLUS SYSTEMS INC
11 patentsUS9786570B2Oct 10, 2017
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC362 citations99
US9390909B2Jul 12, 2016
Soft landing nanolaminates for advanced patterning
NOVELLUS SYSTEMS INC500 citations99
US9287113B2Mar 15, 2016
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC74 citations98
US8999859B2Apr 7, 2015
Plasma activated conformal dielectric film deposition
NOVELLUS SYSTEMS INC56 citations96
US10008428B2Jun 26, 2018
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC27 citations94
US10043655B2Aug 7, 2018
Plasma activated conformal dielectric film deposition
NOVELLUS SYSTEMS INC28 citations93
US9570274B2Feb 14, 2017
Plasma activated conformal dielectric film deposition
NOVELLUS SYSTEMS INC30 citations93
US9355886B2May 31, 2016
Conformal film deposition for gapfill
NOVELLUS SYSTEMS INC53 citations93
US9230800B2Jan 5, 2016
Plasma activated conformal film deposition
NOVELLUS SYSTEMS INC41 citations93
US10741458B2Aug 11, 2020
Methods for depositing films on sensitive substrates
NOVELLUS SYSTEMS INC9 citations84
US9905423B2Feb 27, 2018
Soft landing nanolaminates for advanced patterning
NOVELLUS SYSTEMS INC5 citations84
ASM IP HOLDING BV
6 patentsUS11295980B2Apr 5, 2022
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
ASM IP HOLDING BV14 citations92
US11286558B2Mar 29, 2022
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
ASM IP HOLDING BV9 citations83
US12354877B2Jul 8, 2025
Vapor deposition of films comprising molybdenum
ASM IP HOLDING BV4 citations74
US12203166B2Jan 21, 2025
Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals
ASM IP HOLDING BV3 citations74
US11946136B2Apr 2, 2024
Semiconductor processing device
ASM IP HOLDING BV2 citations73
US11581220B2Feb 14, 2023
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
ASM IP HOLDING BV4 citations73
SWAMINATHAN SHANKAR
2 patentsLAVOIE ADRIEN
1 patentBRISTOL MYERS SQUIBB CO
1 patentShowing the top 50 of 94 patents by PatentIndex Score.