Inventor

DANEK MICHAL

US94 patents

⚠️ This page may combine multiple inventors who share the name “DANEK MICHAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DANEK MICHAL

NOVELLUS SYSTEMS INC

Barrier first method for single damascene trench applications

Method for depositing a diffusion barrier for copper interconnect applications

Method of depositing a diffusion barrier for copper interconnect applications

Tungsten feature fill

Tungsten feature fill

Low tempature tungsten film deposition for small critical dimension contacts and interconnects

Method of depositing copper seed on semiconductor substrates

Multilayer diffusion barriers

Deposition of conformal copper seed layers by control of barrier layer morphology

Method of depositing a diffusion barrier for copper interconnection applications

Use of RF biased ESC to influence the film properties of Ti and TiN

Passivation of copper in dual damascene metalization

Tungsten feature fill with nucleation inhibition

Tungsten feature fill

Depositing tungsten into high aspect ratio features

Conformal film deposition for gapfill

Method for depositing a diffusion barrier for copper interconnect applications

Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques

Method of depositing a diffusion barrier for copper interconnect applications

LAM RES CORP

Deposition of conformal films by atomic layer deposition and atomic layer etch

Method for preventing line bending during metal fill process

Methods and apparatuses for atomic layer cleaning of contacts and vias

Feature fill with multi-stage nucleation inhibition

Feature fill with nucleation inhibition

Atomic layer etching of tungsten for enhanced tungsten deposition fill

Deposition of low fluorine tungsten by sequential CVD process

Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor

Method for preventing line bending during metal fill process

Low resistivity films containing molybdenum

Low resistivity films containing molybdenum

Method of forming low resistivity fluorine free tungsten film without nucleation

Method for void-free cobalt gap fill

Method for void-free cobalt gap fill

Tungsten deposition process using germanium-containing reducing agent

CHANDRASHEKAR ANAND

Depositing tungsten into high aspect ratio features

Thinning tungsten layer after through silicon via filling

Depositing tungsten into high aspect ratio features

Depositing tungsten into high aspect ratio features

Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics

APPLIED MATERIALS INC

Apparatus for substrate processing with improved throughput and yield

Thermally floating pedestal collar in a chemical vapor deposition chamber

Removable pumping channel liners within a chemical vapor deposition chamber

Construction of a film on a semiconductor wafer

Plasma treatment of titanium nitride formed by chemical vapor deposition

DANEK MICHAL

Premetal dielectric integration process

Tungsten barrier and seed for copper filled TSV

CHEN FENG

Methods of improving tungsten contact resistance in small critical dimension features

Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects

CHADRASHEKAR ANAND

Depositing tungsten into high aspect ratio features

GAO JUWEN

Method for improving adhesion of low resistivity tungsten/tungsten nitride layers