Inventor
LIN HSIEN-HSIN
TW38 patents
⚠️ This page may combine multiple inventors who share the name “LIN HSIEN-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
11 patentsUS8652894B2Feb 18, 2014
Method for fabricating a FinFET device
TAIWAN SEMICONDUCTOR MFG394 citations99
US8362575B2Jan 29, 2013
Controlling the shape of source/drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG242 citations99
US8975144B2Mar 10, 2015
Controlling the shape of source/drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG18 citations93
US7494884B2Feb 24, 2009
SiGe selective growth without a hard mask
TAIWAN SEMICONDUCTOR MFG36 citations92
US8846461B2Sep 30, 2014
Silicon layer for stopping dislocation propagation
TAIWAN SEMICONDUCTOR MFG8 citations84
US8357574B2Jan 22, 2013
Method of fabricating epitaxial structures
TAIWAN SEMICONDUCTOR MFG9 citations84
US8344447B2Jan 1, 2013
Silicon layer for stopping dislocation propagation
TAIWAN SEMICONDUCTOR MFG13 citations84
US9373695B2Jun 21, 2016
Method for improving selectivity of epi process
TAIWAN SEMICONDUCTOR MFG2 citations63
US8343872B2Jan 1, 2013
Method of forming strained structures with compound profiles in semiconductor devices
TAIWAN SEMICONDUCTOR MFG3 citations63
US9356150B2May 31, 2016
Method for incorporating impurity element in EPI silicon process
TAIWAN SEMICONDUCTOR MFG0 citations52
US9293537B2Mar 22, 2016
High performance strained source-drain structure and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS9515187B2Dec 6, 2016
Controlling the shape of source/drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12408362B2Sep 2, 2025
Method of forming devices with strained source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11411098B2Aug 9, 2022
Devices with strained source/drain structures and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9224737B2Dec 29, 2015
Dual epitaxial process for a finFET device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63
US9911826B2Mar 6, 2018
Devices with strained source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9842910B2Dec 12, 2017
Methods for manufacturing devices with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9564509B2Feb 7, 2017
Method of fabricating an integrated circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
MEDIATEK INC
6 patentsUS12581681B2Mar 17, 2026
Semiconductor device method for forming the same
MEDIATEK INC0 citations63
US12191226B2Jan 7, 2025
Method of manufacturing heat dissipation substrate with high thermal conductivity for semiconductor device
MEDIATEK INC0 citations62
US11587846B2Feb 21, 2023
Semiconductor device and method of forming the same
MEDIATEK INC1 citations62
US12354882B2Jul 8, 2025
Semiconductor structure and method for forming the same
MEDIATEK INC0 citations52
US10957589B2Mar 23, 2021
Self-aligned contact and method for forming the same
MEDIATEK INC0 citations52
US10741469B2Aug 11, 2020
Thermal via arrangement for multi-channel semiconductor device
MEDIATEK INC0 citations42