P

Inventor

LI SHAN

CN88 patents
⚠️ This page may combine multiple inventors who share the name “LI SHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

14 patents
US10957408B1Mar 23, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD6 citations84
US10991438B1Apr 27, 2021

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD7 citations82
US11276467B2Mar 15, 2022

Method of programming memory device and related memory device having a channel-stacked structure

YANGTZE MEMORY TECH CO LTD2 citations73
US11227871B2Jan 18, 2022

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US11222674B2Jan 11, 2022

Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing same

YANGTZE MEMORY TECH CO LTD5 citations73
US10885990B1Jan 5, 2021

Method of performing programming operation and related memory device

YANGTZE MEMORY TECH CO LTD3 citations72
US10957409B1Mar 23, 2021

Method of performing programming operation and related memory device

YANGTZE MEMORY TECH CO LTD3 citations71
US12412609B2Sep 9, 2025

Method of reducing program disturbance in memory device and memory device utilizing same

YANGTZE MEMORY TECH CO LTD0 citations62
US11751394B2Sep 5, 2023

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11676646B2Jun 13, 2023

Method of reducing program disturbance in memory device and memory device utilizing same

YANGTZE MEMORY TECH CO LTD0 citations62
US11205494B2Dec 21, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD0 citations62
US11848058B2Dec 19, 2023

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD0 citations61
US11398284B2Jul 26, 2022

Method of performing programming operation and related memory device

YANGTZE MEMORY TECH CO LTD0 citations61

SHANGHAI SANSI ELECTR ENG CO LTD

8 patents

GOOGLE LLC

7 patents

CYCLOPURE INC

4 patents

OTIS ELEVATOR CO

2 patents

LI SHAN

2 patents

MICROSOFT TECHNOLOGY LICENSING LLC

2 patents

HESAI PHOTONICS TECH CO LTD

1 patent

CHUNG SHAN INST OF SCIENCE

1 patent

ERICSSON TELEFON AB L M

1 patent

HESAI TECHNOLOGY CO LTD

1 patent

UNIV WUHAN

1 patent

GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD

1 patent

TOSHIBA MEMORY CORP

1 patent

EUREKA THERAPEUTICS INC

1 patent

CALTERAH SEMICONDUCTOR TECH SHANGHAI CO LTD

1 patent

CHINA PETROLEUM & CHEM CORP

1 patent

THE INST OF GENETICS AND DEVELOPMENTAL BIOLOGY CHINESE ACADEMY OF SCIENCES

1 patent

Showing the top 50 of 88 patents by PatentIndex Score.