Inventor · disambiguated record
Yasushi Haga
Also filed as: HAGA YASUSHI
4 granted patents·4 pending applications·17 citations·filing 2002–2007
70Inventor score
Files withSEIKO EPSON CORP7
Top patents by PatentIndex Score
8 records- 0159US6780701B2Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrateSEIKO EPSON CORP·Filed 2002·Granted Aug 24, 2004·7 cites·11 claims
- 0249US6720222B2Method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2002·Granted Apr 13, 2004·5 cites·8 claims
- 0349US6638804B2Method of manufacturing semiconductor device with high and low breakdown transistorsSEIKO EPSON CORP·Filed 2002·Granted Oct 28, 2003·5 cites·5 claims
- 0449US2008064169A1Method for manufacturing semiconductor device, and semiconductor deviceSEIKO EPSON CORP·Filed 2007·Application pending·0 cites
- 0549US2008061380A1Method for manufacturing semiconductor device, and semiconductor deviceSEIKO EPSON CORP·Filed 2007·Application pending·0 cites
- 0638US2004256677A1Method for manufacturing semiconductor device, and semiconductor deviceSEIKO EPSON CORP·Filed 2004·Application pending·0 cites
- 0731US6916714B2Method of manufacturing a semiconductor device, in which a high-breakdown-voltage mos transistor and a low-breakdown-voltage mos transistor are formed on an identical semiconductor substrate and semiconductor device manufactured therebySEIKO EPSON CORP·Filed 2002·Granted Jul 12, 2005·0 cites·2 claims
- 0822US2004238858A1Semiconductor device and a method of manufacturing the sameFiled 2004·Application pending·0 cites
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