Inventor
SU CHING-CHUNG
TW31 patents
⚠️ This page may combine multiple inventors who share the name “SU CHING-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS10163974B2Dec 25, 2018
Method of forming absorption enhancement structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD21 citations94
US10847564B1Nov 24, 2020
Charge release layer to remove charge carriers from dielectric grid structures in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10304898B2May 28, 2019
Absorption enhancement structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10804315B2Oct 13, 2020
Absorption enhancement structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510799B2Dec 17, 2019
Absorption enhancement structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9991303B2Jun 5, 2018
Image sensor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11430909B2Aug 30, 2022
BSI chip with backside alignment mark
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10784150B2Sep 22, 2020
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12468130B2Nov 11, 2025
Optical device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439717B2Oct 7, 2025
Grid structure with at least partially angled sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183753B2Dec 31, 2024
Image sensor and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990488B2May 21, 2024
Grid structure with at least partially angled sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11948962B2Apr 2, 2024
Charge release layer to remove charge carriers from dielectric grid structures in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11522004B2Dec 6, 2022
Absorption enhancement structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380728B2Jul 5, 2022
Charge release layer to remove charge carriers from dielectric grid structures in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154939B2Nov 26, 2024
High capacitance MIM device with self aligned spacer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12094997B2Sep 17, 2024
BSI chip with backside alignment mark
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11769791B2Sep 26, 2023
High capacitance MIM device with self aligned spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9984918B2May 29, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12218160B2Feb 4, 2025
Pixel sensor including a layer stack to reduce and/or block the effects of plasma processing and etching on the pixel sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840287B2Nov 17, 2020
3DIC interconnect apparatus and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10361234B2Jul 23, 2019
3DIC interconnect apparatus and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10163972B2Dec 25, 2018
Image sensing device with photon blocking layer and anti-reflective coating
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164156B2Dec 25, 2018
Structure and formation method of image sensor structure with grid structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9941320B2Apr 10, 2018
3DIC interconnect apparatus and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276427B2Apr 30, 2019
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11164903B2Nov 2, 2021
Image sensor with pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48