Inventor
RYAN ERROL TODD
US53 patents
⚠️ This page may combine multiple inventors who share the name “RYAN ERROL TODD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
33 patentsUS10177028B1Jan 8, 2019
Method for manufacturing fully aligned via structures having relaxed gapfills
GLOBALFOUNDRIES INC44 citations94
US9831174B1Nov 28, 2017
Devices and methods of forming low resistivity noble metal interconnect
GLOBALFOUNDRIES INC9 citations84
US9530691B1Dec 27, 2016
Methods, apparatus and system for forming a dielectric field for dual orientation self aligned vias
GLOBALFOUNDRIES INC15 citations84
US9520321B2Dec 13, 2016
Integrated circuits and methods for fabricating integrated circuits with self-aligned vias
GLOBALFOUNDRIES INC11 citations83
US9431294B2Aug 30, 2016
Methods of producing integrated circuits with an air gap
GLOBALFOUNDRIES INC14 citations83
US8932934B2Jan 13, 2015
Methods of self-forming barrier integration with pore stuffed ULK material
GLOBALFOUNDRIES INC6 citations83
US8835306B2Sep 16, 2014
Methods for fabricating integrated circuits having embedded electrical interconnects
GLOBALFOUNDRIES INC11 citations83
US8815685B2Aug 26, 2014
Methods for fabricating integrated circuits having confined epitaxial growth regions
GLOBALFOUNDRIES INC10 citations83
US8753975B1Jun 17, 2014
Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device
GLOBALFOUNDRIES INC10 citations83
US10109526B1Oct 23, 2018
Etch profile control during skip via formation
GLOBALFOUNDRIES INC9 citations80
US10134580B1Nov 20, 2018
Metallization levels and methods of making thereof
GLOBALFOUNDRIES INC6 citations73
US9559059B2Jan 31, 2017
Methods of forming an improved via to contact interface by selective formation of a conductive capping layer
GLOBALFOUNDRIES INC4 citations73
US10580696B1Mar 3, 2020
Interconnects formed by a metal displacement reaction
GLOBALFOUNDRIES INC3 citations72
US10181421B1Jan 15, 2019
Liner recess for fully aligned via
GLOBALFOUNDRIES INC6 citations72
US10163633B2Dec 25, 2018
Non-mandrel cut formation
GLOBALFOUNDRIES INC3 citations72
US10485111B2Nov 19, 2019
Via and skip via structures
GLOBALFOUNDRIES INC2 citations71
US8349731B2Jan 8, 2013
Methods for forming copper diffusion barriers for semiconductor interconnect structures
GLOBALFOUNDRIES INC4 citations63
US9076846B2Jul 7, 2015
Methods for fabricating integrated circuits using surface modification to selectively inhibit etching
GLOBALFOUNDRIES INC2 citations62
US9054052B2Jun 9, 2015
Methods for integration of pore stuffing material
GLOBALFOUNDRIES INC3 citations62
US10199261B1Feb 5, 2019
Via and skip via structures
GLOBALFOUNDRIES INC1 citations61
US7843015B2Nov 30, 2010
Multi-silicide system in integrated circuit technology
GLOBALFOUNDRIES INC4 citations61
US10679937B2Jun 9, 2020
Devices and methods of forming low resistivity noble metal interconnect
GLOBALFOUNDRIES INC0 citations52
US10636698B2Apr 28, 2020
Skip via structures
GLOBALFOUNDRIES INC0 citations52
US10283372B2May 7, 2019
Interconnects formed by a metal replacement process
GLOBALFOUNDRIES INC0 citations52
US10262892B2Apr 16, 2019
Skip via structures
GLOBALFOUNDRIES INC0 citations52
US9613906B2Apr 4, 2017
Integrated circuits including modified liners and methods for fabricating the same
GLOBALFOUNDRIES INC0 citations52
US9570394B1Feb 14, 2017
Formation of IC structure with pair of unitary metal fins
GLOBALFOUNDRIES INC1 citations52
US9466530B2Oct 11, 2016
Methods of forming an improved via to contact interface by selective formation of a metal silicide capping layer
GLOBALFOUNDRIES INC1 citations52
US8980740B2Mar 17, 2015
Barrier layer conformality in copper interconnects
GLOBALFOUNDRIES INC0 citations52
US8889549B2Nov 18, 2014
Methods of forming conductive structures using a sacrificial liner layer
GLOBALFOUNDRIES INC0 citations52
US10008408B2Jun 26, 2018
Devices and methods of forming asymmetric line/space with barrierless metallization
GLOBALFOUNDRIES INC0 citations51
US9318436B2Apr 19, 2016
Copper based nitride liner passivation layers for conductive copper structures
GLOBALFOUNDRIES INC0 citations51
US8859419B2Oct 14, 2014
Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device
GLOBALFOUNDRIES INC1 citations51
ADVANCED MICRO DEVICES INC
10 patentsUS6555479B1Apr 29, 2003
Method for forming openings for conductive interconnects
ADVANCED MICRO DEVICES INC31 citations92
US6489240B1Dec 3, 2002
Method for forming copper interconnects
ADVANCED MICRO DEVICES INC23 citations92
US7670915B1Mar 2, 2010
Contact liner in integrated circuit technology
ADVANCED MICRO DEVICES INC9 citations84
US6809032B1Oct 26, 2004
Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques
ADVANCED MICRO DEVICES INC18 citations84
US6413846B1Jul 2, 2002
Contact each methodology and integration scheme
ADVANCED MICRO DEVICES INC15 citations84
US6514858B1Feb 4, 2003
Test structure for providing depth of polish feedback
ADVANCED MICRO DEVICES INC8 citations73
US6969678B1Nov 29, 2005
Multi-silicide in integrated circuit technology
ADVANCED MICRO DEVICES INC8 citations72
US7005357B2Feb 28, 2006
Low stress sidewall spacer in integrated circuit technology
ADVANCED MICRO DEVICES INC2 citations62
US7151020B1Dec 19, 2006
Conversion of transition metal to silicide through back end processing in integrated circuit technology
ADVANCED MICRO DEVICES INC2 citations61
US6967158B2Nov 22, 2005
Method for forming a low-k dielectric structure on a substrate
ADVANCED MICRO DEVICES INC3 citations56
INTERMOLECULAR INC
4 patentsUS9012322B2Apr 21, 2015
Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
INTERMOLECULAR INC30 citations94
US9123785B1Sep 1, 2015
Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/HCI solution
INTERMOLECULAR INC12 citations84
US9343408B2May 17, 2016
Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/H2SO4 solution
INTERMOLECULAR INC2 citations63
US9224639B2Dec 29, 2015
Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
INTERMOLECULAR INC1 citations52
ADVANCEDMICRO DEVICES INC
1 patentFREESCALE SEMICONDUCTOR INC
1 patentINTEL CORP
1 patentShowing the top 50 of 53 patents by PatentIndex Score.