P

Inventor

RYAN ERROL TODD

US53 patents
⚠️ This page may combine multiple inventors who share the name “RYAN ERROL TODD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

33 patents
US10177028B1Jan 8, 2019

Method for manufacturing fully aligned via structures having relaxed gapfills

GLOBALFOUNDRIES INC44 citations94
US9831174B1Nov 28, 2017

Devices and methods of forming low resistivity noble metal interconnect

GLOBALFOUNDRIES INC9 citations84
US9530691B1Dec 27, 2016

Methods, apparatus and system for forming a dielectric field for dual orientation self aligned vias

GLOBALFOUNDRIES INC15 citations84
US9520321B2Dec 13, 2016

Integrated circuits and methods for fabricating integrated circuits with self-aligned vias

GLOBALFOUNDRIES INC11 citations83
US9431294B2Aug 30, 2016

Methods of producing integrated circuits with an air gap

GLOBALFOUNDRIES INC14 citations83
US8932934B2Jan 13, 2015

Methods of self-forming barrier integration with pore stuffed ULK material

GLOBALFOUNDRIES INC6 citations83
US8835306B2Sep 16, 2014

Methods for fabricating integrated circuits having embedded electrical interconnects

GLOBALFOUNDRIES INC11 citations83
US8815685B2Aug 26, 2014

Methods for fabricating integrated circuits having confined epitaxial growth regions

GLOBALFOUNDRIES INC10 citations83
US8753975B1Jun 17, 2014

Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device

GLOBALFOUNDRIES INC10 citations83
US10109526B1Oct 23, 2018

Etch profile control during skip via formation

GLOBALFOUNDRIES INC9 citations80
US10134580B1Nov 20, 2018

Metallization levels and methods of making thereof

GLOBALFOUNDRIES INC6 citations73
US9559059B2Jan 31, 2017

Methods of forming an improved via to contact interface by selective formation of a conductive capping layer

GLOBALFOUNDRIES INC4 citations73
US10580696B1Mar 3, 2020

Interconnects formed by a metal displacement reaction

GLOBALFOUNDRIES INC3 citations72
US10181421B1Jan 15, 2019

Liner recess for fully aligned via

GLOBALFOUNDRIES INC6 citations72
US10163633B2Dec 25, 2018

Non-mandrel cut formation

GLOBALFOUNDRIES INC3 citations72
US10485111B2Nov 19, 2019

Via and skip via structures

GLOBALFOUNDRIES INC2 citations71
US8349731B2Jan 8, 2013

Methods for forming copper diffusion barriers for semiconductor interconnect structures

GLOBALFOUNDRIES INC4 citations63
US9076846B2Jul 7, 2015

Methods for fabricating integrated circuits using surface modification to selectively inhibit etching

GLOBALFOUNDRIES INC2 citations62
US9054052B2Jun 9, 2015

Methods for integration of pore stuffing material

GLOBALFOUNDRIES INC3 citations62
US10199261B1Feb 5, 2019

Via and skip via structures

GLOBALFOUNDRIES INC1 citations61
US7843015B2Nov 30, 2010

Multi-silicide system in integrated circuit technology

GLOBALFOUNDRIES INC4 citations61
US10679937B2Jun 9, 2020

Devices and methods of forming low resistivity noble metal interconnect

GLOBALFOUNDRIES INC0 citations52
US10636698B2Apr 28, 2020

Skip via structures

GLOBALFOUNDRIES INC0 citations52
US10283372B2May 7, 2019

Interconnects formed by a metal replacement process

GLOBALFOUNDRIES INC0 citations52
US10262892B2Apr 16, 2019

Skip via structures

GLOBALFOUNDRIES INC0 citations52
US9613906B2Apr 4, 2017

Integrated circuits including modified liners and methods for fabricating the same

GLOBALFOUNDRIES INC0 citations52
US9570394B1Feb 14, 2017

Formation of IC structure with pair of unitary metal fins

GLOBALFOUNDRIES INC1 citations52
US9466530B2Oct 11, 2016

Methods of forming an improved via to contact interface by selective formation of a metal silicide capping layer

GLOBALFOUNDRIES INC1 citations52
US8980740B2Mar 17, 2015

Barrier layer conformality in copper interconnects

GLOBALFOUNDRIES INC0 citations52
US8889549B2Nov 18, 2014

Methods of forming conductive structures using a sacrificial liner layer

GLOBALFOUNDRIES INC0 citations52
US10008408B2Jun 26, 2018

Devices and methods of forming asymmetric line/space with barrierless metallization

GLOBALFOUNDRIES INC0 citations51
US9318436B2Apr 19, 2016

Copper based nitride liner passivation layers for conductive copper structures

GLOBALFOUNDRIES INC0 citations51
US8859419B2Oct 14, 2014

Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device

GLOBALFOUNDRIES INC1 citations51

ADVANCED MICRO DEVICES INC

10 patents

INTERMOLECULAR INC

4 patents

ADVANCEDMICRO DEVICES INC

1 patent

FREESCALE SEMICONDUCTOR INC

1 patent

INTEL CORP

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.