P

Inventor

JENG NANSENG

US53 patents
⚠️ This page may combine multiple inventors who share the name “JENG NANSENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

45 patents
US5741624AApr 21, 1998

Method for reducing photolithographic steps in a semiconductor interconnect process

MICRON TECHNOLOGY INC100 citations99
US6562730B2May 13, 2003

Barrier in gate stack for improved gate dielectric integrity

MICRON TECHNOLOGY INC44 citations96
US6373114B1Apr 16, 2002

Barrier in gate stack for improved gate dielectric integrity

MICRON TECHNOLOGY INC76 citations96
US5472904ADec 5, 1995

Thermal trench isolation

MICRON TECHNOLOGY INC77 citations96
US6930363B2Aug 16, 2005

Barrier in gate stack for improved gate dielectric integrity

MICRON TECHNOLOGY INC16 citations93
US6770571B2Aug 3, 2004

Barrier in gate stack for improved gate dielectric integrity

MICRON TECHNOLOGY INC15 citations93
US6096457AAug 1, 2000

Method for optimizing printing of a phase shift mask having a phase shift error

MICRON TECHNOLOGY INC17 citations93
US5972569AOct 26, 1999

Method for reducing photolithographic steps in a semiconductor interconnect process

MICRON TECHNOLOGY INC17 citations93
US5837378ANov 17, 1998

Method of reducing stress-induced defects in silicon

MICRON TECHNOLOGY INC25 citations93
US5798280AAug 25, 1998

Process for doping hemispherical grain silicon

MICRON TECHNOLOGY INC19 citations93
US5702986ADec 30, 1997

Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges

MICRON TECHNOLOGY INC25 citations93
US5661072AAug 26, 1997

Method for reducing oxide thinning during the formation of a semiconductor device

MICRON TECHNOLOGY INC37 citations93
US5658829AAug 19, 1997

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC33 citations93
US5637514AJun 10, 1997

Method of forming a field effect transistor

MICRON TECHNOLOGY INC40 citations93
US5580821ADec 3, 1996

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC40 citations93
US5726092AMar 10, 1998

Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate

MICRON TECHNOLOGY INC27 citations92
US5629230AMay 13, 1997

Semiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portion

MICRON TECHNOLOGY INC33 citations92
US5888881AMar 30, 1999

Method of trench isolation during the formation of a semiconductor device

MICRON TECHNOLOGY INC19 citations91
US6232191B1May 15, 2001

Method for forming a spacer for semiconductor manufacture

MICRON TECHNOLOGY INC13 citations82
US6365490B1Apr 2, 2002

Process to improve the flow of oxide during field oxidation by fluorine doping

MICRON TECHNOLOGY INC5 citations74
US6225174B1May 1, 2001

Method for forming a spacer using photosensitive material

MICRON TECHNOLOGY INC5 citations74
US6221564B1Apr 24, 2001

Method for forming a spacer out of photosensitive material

MICRON TECHNOLOGY INC10 citations74
US6090685AJul 18, 2000

Method of forming a LOCOS trench isolation structure

MICRON TECHNOLOGY INC9 citations74
US6069059AMay 30, 2000

Well-drive anneal technique using preplacement of nitride films for enhanced field isolation

MICRON TECHNOLOGY INC12 citations74
US5963820AOct 5, 1999

Method for forming field oxide or other insulators during the formation of a semiconductor device

MICRON TECHNOLOGY INC5 citations74
US5933754AAug 3, 1999

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC13 citations74
US5902128AMay 11, 1999

Process to improve the flow of oxide during field oxidation by fluorine doping

MICRON TECHNOLOGY INC8 citations74
US5837596ANov 17, 1998

Field oxide formation by oxidation of polysilicon layer

MICRON TECHNOLOGY INC11 citations74
US5753962AMay 19, 1998

Texturized polycrystalline silicon to aid field oxide formation

MICRON TECHNOLOGY INC12 citations74
US5719418AFeb 17, 1998

Contact-substrate for a semiconductor device comprising a contour

MICRON TECHNOLOGY INC12 citations74
US5661073AAug 26, 1997

Method for forming field oxide having uniform thickness

MICRON TECHNOLOGY INC6 citations74
US5612248AMar 18, 1997

Method for forming field oxide or other insulators during the formation of a semiconductor device

MICRON TECHNOLOGY INC8 citations74
US5508215AApr 16, 1996

Current leakage reduction at the storage node diffusion region of a stacked-trench dram cell by selectively oxidizing the floor of the trench

MICRON TECHNOLOGY INC11 citations74
US6917411B1Jul 12, 2005

Method for optimizing printing of an alternating phase shift mask having a phase shift error

MICRON TECHNOLOGY INC4 citations63
US6835634B1Dec 28, 2004

Streamlined field isolation process

MICRON TECHNOLOGY INC3 citations63
US6809395B1Oct 26, 2004

Isolation structure having trench structures formed on both side of a locos

MICRON TECHNOLOGY INC4 citations63
US6472280B2Oct 29, 2002

Method for forming a spacer for semiconductor manufacture

MICRON TECHNOLOGY INC2 citations63
US6245671B1Jun 12, 2001

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC3 citations63
US6127096AOct 3, 2000

Method for reducing photolithographic steps in a semiconductor interconnect process

MICRON TECHNOLOGY INC3 citations63
US6103595AAug 15, 2000

Assisted local oxidation of silicon

MICRON TECHNOLOGY INC4 citations63
US6077740AJun 20, 2000

Method for forming a semiconductor device contact structure comprising a contour

MICRON TECHNOLOGY INC3 citations63
US5940692AAug 17, 1999

Method of forming a field effect transistor

MICRON TECHNOLOGY INC4 citations63
US5891788AApr 6, 1999

Locus isolation technique using high pressure oxidation (hipox) and protective spacers

MICRON TECHNOLOGY INC6 citations63
US5674776AOct 7, 1997

Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate

MICRON TECHNOLOGY INC3 citations62
US6936897B2Aug 30, 2005

Intermediate structure having a silicon barrier layer encapsulating a semiconductor substrate

MICRON TECHNOLOGY INC0 citations52

MICRON SEMICONDUCTOR INC

3 patents

MICROM TECHNOLOGY INC

1 patent

(unassigned)

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.