Inventor
JENG NANSENG
US53 patents
⚠️ This page may combine multiple inventors who share the name “JENG NANSENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
45 patentsUS5741624AApr 21, 1998
Method for reducing photolithographic steps in a semiconductor interconnect process
MICRON TECHNOLOGY INC100 citations99
US6562730B2May 13, 2003
Barrier in gate stack for improved gate dielectric integrity
MICRON TECHNOLOGY INC44 citations96
US6373114B1Apr 16, 2002
Barrier in gate stack for improved gate dielectric integrity
MICRON TECHNOLOGY INC76 citations96
US5472904ADec 5, 1995
Thermal trench isolation
MICRON TECHNOLOGY INC77 citations96
US6930363B2Aug 16, 2005
Barrier in gate stack for improved gate dielectric integrity
MICRON TECHNOLOGY INC16 citations93
US6770571B2Aug 3, 2004
Barrier in gate stack for improved gate dielectric integrity
MICRON TECHNOLOGY INC15 citations93
US6096457AAug 1, 2000
Method for optimizing printing of a phase shift mask having a phase shift error
MICRON TECHNOLOGY INC17 citations93
US5972569AOct 26, 1999
Method for reducing photolithographic steps in a semiconductor interconnect process
MICRON TECHNOLOGY INC17 citations93
US5837378ANov 17, 1998
Method of reducing stress-induced defects in silicon
MICRON TECHNOLOGY INC25 citations93
US5798280AAug 25, 1998
Process for doping hemispherical grain silicon
MICRON TECHNOLOGY INC19 citations93
US5702986ADec 30, 1997
Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges
MICRON TECHNOLOGY INC25 citations93
US5661072AAug 26, 1997
Method for reducing oxide thinning during the formation of a semiconductor device
MICRON TECHNOLOGY INC37 citations93
US5658829AAug 19, 1997
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC33 citations93
US5637514AJun 10, 1997
Method of forming a field effect transistor
MICRON TECHNOLOGY INC40 citations93
US5580821ADec 3, 1996
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC40 citations93
US5726092AMar 10, 1998
Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate
MICRON TECHNOLOGY INC27 citations92
US5629230AMay 13, 1997
Semiconductor processing method of forming field oxide regions on a semiconductor substrate utilizing a laterally outward projecting foot portion
MICRON TECHNOLOGY INC33 citations92
US5888881AMar 30, 1999
Method of trench isolation during the formation of a semiconductor device
MICRON TECHNOLOGY INC19 citations91
US6232191B1May 15, 2001
Method for forming a spacer for semiconductor manufacture
MICRON TECHNOLOGY INC13 citations82
US6365490B1Apr 2, 2002
Process to improve the flow of oxide during field oxidation by fluorine doping
MICRON TECHNOLOGY INC5 citations74
US6225174B1May 1, 2001
Method for forming a spacer using photosensitive material
MICRON TECHNOLOGY INC5 citations74
US6221564B1Apr 24, 2001
Method for forming a spacer out of photosensitive material
MICRON TECHNOLOGY INC10 citations74
US6090685AJul 18, 2000
Method of forming a LOCOS trench isolation structure
MICRON TECHNOLOGY INC9 citations74
US6069059AMay 30, 2000
Well-drive anneal technique using preplacement of nitride films for enhanced field isolation
MICRON TECHNOLOGY INC12 citations74
US5963820AOct 5, 1999
Method for forming field oxide or other insulators during the formation of a semiconductor device
MICRON TECHNOLOGY INC5 citations74
US5933754AAug 3, 1999
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC13 citations74
US5902128AMay 11, 1999
Process to improve the flow of oxide during field oxidation by fluorine doping
MICRON TECHNOLOGY INC8 citations74
US5837596ANov 17, 1998
Field oxide formation by oxidation of polysilicon layer
MICRON TECHNOLOGY INC11 citations74
US5753962AMay 19, 1998
Texturized polycrystalline silicon to aid field oxide formation
MICRON TECHNOLOGY INC12 citations74
US5719418AFeb 17, 1998
Contact-substrate for a semiconductor device comprising a contour
MICRON TECHNOLOGY INC12 citations74
US5661073AAug 26, 1997
Method for forming field oxide having uniform thickness
MICRON TECHNOLOGY INC6 citations74
US5612248AMar 18, 1997
Method for forming field oxide or other insulators during the formation of a semiconductor device
MICRON TECHNOLOGY INC8 citations74
US5508215AApr 16, 1996
Current leakage reduction at the storage node diffusion region of a stacked-trench dram cell by selectively oxidizing the floor of the trench
MICRON TECHNOLOGY INC11 citations74
US6917411B1Jul 12, 2005
Method for optimizing printing of an alternating phase shift mask having a phase shift error
MICRON TECHNOLOGY INC4 citations63
US6835634B1Dec 28, 2004
Streamlined field isolation process
MICRON TECHNOLOGY INC3 citations63
US6809395B1Oct 26, 2004
Isolation structure having trench structures formed on both side of a locos
MICRON TECHNOLOGY INC4 citations63
US6472280B2Oct 29, 2002
Method for forming a spacer for semiconductor manufacture
MICRON TECHNOLOGY INC2 citations63
US6245671B1Jun 12, 2001
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC3 citations63
US6127096AOct 3, 2000
Method for reducing photolithographic steps in a semiconductor interconnect process
MICRON TECHNOLOGY INC3 citations63
US6103595AAug 15, 2000
Assisted local oxidation of silicon
MICRON TECHNOLOGY INC4 citations63
US6077740AJun 20, 2000
Method for forming a semiconductor device contact structure comprising a contour
MICRON TECHNOLOGY INC3 citations63
US5940692AAug 17, 1999
Method of forming a field effect transistor
MICRON TECHNOLOGY INC4 citations63
US5891788AApr 6, 1999
Locus isolation technique using high pressure oxidation (hipox) and protective spacers
MICRON TECHNOLOGY INC6 citations63
US5674776AOct 7, 1997
Semiconductor processing methods of forming field oxidation regions on a semiconductor substrate
MICRON TECHNOLOGY INC3 citations62
US6936897B2Aug 30, 2005
Intermediate structure having a silicon barrier layer encapsulating a semiconductor substrate
MICRON TECHNOLOGY INC0 citations52
MICRON SEMICONDUCTOR INC
3 patentsUS5492853AFeb 20, 1996
Method of forming a contact using a trench and an insulation layer during the formation of a semiconductor device
MICRON SEMICONDUCTOR INC112 citations99
US5438016AAug 1, 1995
Method of semiconductor device isolation employing polysilicon layer for field oxide formation
MICRON SEMICONDUCTOR INC80 citations96
US5416348AMay 16, 1995
Current leakage reduction at the storage node diffusion region of a stacked-trench DRAM cell by selectively oxidizing the floor of the trench
MICRON SEMICONDUCTOR INC16 citations82
MICROM TECHNOLOGY INC
1 patent(unassigned)
1 patentShowing the top 50 of 53 patents by PatentIndex Score.