Inventor
KO YOUNG-WI
KR3 patents
Patents
3 patentsUS5528537AJun 18, 1996
Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage
SAMSUNG ELECTRONICS CO LTD17 citations80
US5635747AJun 3, 1997
Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage
SAMSUNG ELECTRONICS CO LTD4 citations61
US5736772AApr 7, 1998
Bifurcated polysilicon gate electrodes and fabrication methods
SAMSUNG ELECTRONICS CO LTD3 citations60