Inventor

TU SHANGHUI LARRY

US24 patents

⚠️ This page may combine multiple inventors who share the name “TU SHANGHUI LARRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TU SHANGHUI LARRY

SILANNA ASIA PTE LTD

Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact

Connection arrangements for integrated lateral diffusion field effect transistors

Ultra-high voltage resistor with voltage sense

Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact

LDMOS architecture and method for forming

Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact

LDMOS architecture and method for forming

Ultra-high voltage resistor with voltage sense

Source contact formation of MOSFET with gate shield buffer for pitch reduction

Source contact formation of MOSFET with gate shield buffer for pitch reduction

Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact

Integrated circuit connection arrangement for minimizing crosstalk

Leadframe and integrated circuit connection arrangement

Connection arrangements for integrated lateral diffusion field effect transistors

Integrated circuit connection arrangement for minimizing crosstalk

Source contact formation of MOSFET with gate shield buffer for pitch reduction

Avalanche robust LDMOS

SEMICONDUCTOR COMPONENTS IND

Semiconductor device having trench charge compensation regions and method

Semiconductor device having sub-surface trench charge compensation regions

High voltage lateral FET structure with improved on resistance performance

Semiconductor structure with improved on resistance and breakdown voltage performance

Semiconductor structure with improved on resistance and breakdown voltage performance

Method of forming a semiconductor device having sub-surface trench charge compensation regions

Semiconductor device having field stabilization film and method