Inventor

YANG JINWEI

US78 patents

⚠️ This page may combine multiple inventors who share the name “YANG JINWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG JINWEI

SENSOR ELECTRONIC TECH INC

Metal oxide semiconductor heterostructure field effect transistor

Metal oxide semiconductor heterostructure field effect transistor

Semiconductor structure with stress-reducing buffer structure

Patterned layer design for group III nitride layer growth

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

Stress relieving semiconductor layer

Semiconductor structure with inhomogeneous regions

Semiconductor material doping

Semiconductor layer including compositional inhomogeneities

Superlattice structure

Deep ultraviolet light emitting diode

Ohmic contact to semiconductor

Stress relieving semiconductor layer

Ultraviolet reflective rough adhesive contact

Nitride-based heterostructure devices

Method of producing nitride-based heterostructure devices

Optoelectronic device with modulation doping

Heterostructure including a composite semiconductor layer

Patterned layer design for group III nitride layer growth

Patterned layer design for group III nitride layer growth

Group III nitride heterostructure for optoelectronic device

Stress relieving semiconductor layer

Optoelectronic device with modulation doping

Optoelectronic device with modulation doping

Patterned substrate design for layer growth

Patterned layer design for group III nitride layer growth

Deep ultraviolet light emitting diode

Patterned layer design for group III nitride layer growth

Group III nitride heterostructure for optoelectronic device

Epitaxy technique for growing semiconductor compounds

Semiconductor material doping

Epitaxy technique for growing semiconductor compounds

Ultraviolet reflective rough adhesive contact

Non-uniform multiple quantum well structure

Deep ultraviolet light emitting diode

Patterned substrate design for layer growth

Semiconductor material doping

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

Ultraviolet device encapsulant

Semiconductor layer including compositional inhomogeneities

Emitting device with compositional and doping inhomogeneities in semiconductor layers

Group III nitride heterostructure for optoelectronic device

Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

SHATALOV MAXIM S

Semiconductor material doping

Patterned substrate design for layer growth

Semiconductor material doping based on target valence band discontinuity

SHUR MICHAEL

Emitting device with compositional and doping inhomogeneities in semiconductor layers

Superlattice structure and method for making the same

GASKA REMIGIJUS

Light emitting device with dislocation bending structure