Inventor

HORIKIRI FUMIMASA

JP53 patents

⚠️ This page may combine multiple inventors who share the name “HORIKIRI FUMIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HORIKIRI FUMIMASA

SUMITOMO CHEMICAL CO

Method for manufacturing niobate-system ferroelectric thin-film device

Ferroelectric thin-film laminated substrate, ferroelectric thin-film device, and manufacturing method of ferroelectric thin-film laminated substrate

Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element

Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stack

Method for manufacturing structure

Nitride crystal substrate and method for manufacturing the same

Method and device for manufacturing structure

Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate

Structure manufacturing method and manufacturing device, and light irradiation device

Piezoelectric laminate, method of manufacturing piezoelectric laminate and piezoelectric element

Nitride crystal substrate and method for manufacturing the same

Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate

Piezoelectric laminate, method of manufacturing the piezoelectric laminate and piezoelectric device

Epitaxial substrate

Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor

Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof

Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device

Crystal laminate, semiconductor device and method for manufacturing the same

Method for manufacturing niobate-system ferroelectric thin-film device

Ferroelectric thin-film laminated substrate, ferroelectric thin-film device,and manufacturing method of ferroelectric thin-film laminated substrate

Method for manufacturing niobate-system ferroelectric thin-film device

Piezoelectric film element, and piezoelectric film device including piezoelectric film including alkali niobate-based perovskite structure

Method for manufacturing niobate-system ferroelectric thin film device

Piezoelectric thin-film element, piezoelectric sensor and vibration generator

Method for manufacturing niobate-system ferroelectric thin film device

Electrochemical sensor unit, electrode for electrochemical sensor, and method of manufacturing electrode for electrochemical sensor

Method for manufacturing ferroelectric thin film device

Method for manufacturing ferroelectric thin film device

SCIOCS CO LTD

Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate

Structure manufacturing method and manufacturing device, and light irradiation device

Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate

Structure and intermediate structure

Nitride crystal substrate and method for manufacturing the same

Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device

Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element

Method for manufacturing semiconductor structure, inspection method, and semiconductor structure

Structure manufacturing method, structure manufacturing apparatus and intermediate structure

Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate

GaN material and method of manufacturing semiconductor device

Structure manufacturing method and intermediate structure

HITACHI CABLE

Piezoelectric element and piezoelectric device

Piezoelectric film-attached substrate, piezoelectric film element and method of manufacturing the same

HITACHI METALS LTD

Alkali-niobate-based piezoelectric thin film element

Piezoelectric thin-film multilayer body

UNIV HOSEI

Gallium nitride laminated substrate and semiconductor device

Semiconductor device and method for manufacturing the same

HORIKIRI FUMIMASA

Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device

Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric device

SUENAGA KAZUFUMI

Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device

SHIBATA KENJI

Piezoelectric thin-film element and piezoelectric thin-film device