Inventor
FURUHASHI MASAYUKI
JP14 patents
⚠️ This page may combine multiple inventors who share the name “FURUHASHI MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
7 patentsUS10529799B2Jan 7, 2020
Semiconductor device
MITSUBISHI ELECTRIC CORP2 citations72
US9515145B2Dec 6, 2016
Vertical MOSFET device with steady on-resistance
MITSUBISHI ELECTRIC CORP5 citations70
US11189689B2Nov 30, 2021
Semiconductor device including an active region that includes a switchable current path
MITSUBISHI ELECTRIC CORP2 citations69
US10854762B2Dec 1, 2020
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations62
US11557671B2Jan 17, 2023
Semiconductor device having trench gate electrodes formed in first pillars including source layers formed in the first pillars being deeper into the substrate than first source layers in second pillars
MITSUBISHI ELECTRIC CORP0 citations50
US9935170B2Apr 3, 2018
Silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP0 citations50
US10002931B2Jun 19, 2018
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations41
FUJITSU LTD
2 patentsUS7166516B2Jan 23, 2007
Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN
FUJITSU LTD13 citations83
US6800538B2Oct 5, 2004
Semiconductor device fabrication method and semiconductor fabrication control method
FUJITSU LTD4 citations61