Inventor
KWACK HONG-SUK
KR2 patents
Patents
2 patentsUS6750525B2Jun 15, 2004
Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure
SAMSUNG ELECTRONICS CO LTD26 citations90
US6734065B2May 11, 2004
Method of forming a non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure
SAMSUNG ELECTRONICS CO LTD39 citations90