Inventor
YOUNG BAO-RU
TW172 patents
⚠️ This page may combine multiple inventors who share the name “YOUNG BAO-RU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
25 patentsUS10079289B2Sep 18, 2018
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US10971588B2Apr 6, 2021
Semiconductor device including FinFET with self-align contact
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10867101B1Dec 15, 2020
Leakage reduction between two transistor devices on a same continuous fin
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10515957B2Dec 24, 2019
Semiconductor device having fins
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10515850B2Dec 24, 2019
Method and IC design with non-linear power rails
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10354997B2Jul 16, 2019
Method for manufacturing semiconductor device with replacement gates
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10340348B2Jul 2, 2019
Method of manufacturing finFETs with self-align contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10204202B2Feb 12, 2019
Dummy fin cell placement in an integrated circuit layout
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10141296B2Nov 27, 2018
Dummy fin cell placement in an integrated circuit layout
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9865589B1Jan 9, 2018
System and method of fabricating ESD FinFET with improved metal landing in the drain
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9773879B2Sep 26, 2017
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9508721B2Nov 29, 2016
Metal gate structure of a CMOS semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10276445B2Apr 30, 2019
Leakage reduction methods and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11855073B2Dec 26, 2023
ESD structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10854512B2Dec 1, 2020
Method and IC design with non-linear power rails
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658492B2May 19, 2020
Polysilicon design for replacement gate technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522634B2Dec 31, 2019
Finfet with self-aligned source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10403736B2Sep 3, 2019
Polysilicon design for replacement gate technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276559B2Apr 30, 2019
System and method of fabricating ESD FinFET with improved metal landing in the drain
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10236220B1Mar 19, 2019
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10164034B2Dec 25, 2018
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9865510B2Jan 9, 2018
Device and methods for high-K and metal gate slacks
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9859364B1Jan 2, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9679817B2Jun 13, 2017
Semiconductor structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9412841B2Aug 9, 2016
Method of fabricating a transistor using contact etch stop layers
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
TAIWAN SEMICONDUCTOR MFG
12 patentsUS6491042B1Dec 10, 2002
Post etching treatment process for high density oxide etcher
TAIWAN SEMICONDUCTOR MFG18 citations93
US5968278AOct 19, 1999
High aspect ratio contact
TAIWAN SEMICONDUCTOR MFG19 citations93
US8557659B2Oct 15, 2013
Spacer structures of a semiconductor device
TAIWAN SEMICONDUCTOR MFG23 citations92
US8343867B2Jan 1, 2013
Method for main spacer trim-back
TAIWAN SEMICONDUCTOR MFG16 citations92
US6457477B1Oct 1, 2002
Method of cleaning a copper/porous low-k dual damascene etch
TAIWAN SEMICONDUCTOR MFG31 citations89
US6436851B1Aug 20, 2002
Method for spin coating a high viscosity liquid on a wafer
TAIWAN SEMICONDUCTOR MFG39 citations89
US9219124B2Dec 22, 2015
Metal gate semiconductor device
TAIWAN SEMICONDUCTOR MFG7 citations84
US8969949B2Mar 3, 2015
Structure and method for static random access memory device of vertical tunneling field effect transistor
TAIWAN SEMICONDUCTOR MFG10 citations84
US8846510B2Sep 30, 2014
Method and structure to boost MOSFET performance and NBTI
TAIWAN SEMICONDUCTOR MFG10 citations84
USRE45060EAug 5, 2014
Spacer structures of a semiconductor device
TAIWAN SEMICONDUCTOR MFG4 citations84
US8003467B2Aug 23, 2011
Method for making a semiconductor device having metal gate stacks
TAIWAN SEMICONDUCTOR MFG11 citations83
US9219125B2Dec 22, 2015
Device and methods for high-k and metal gate stacks
TAIWAN SEMICONDUCTOR MFG4 citations73
CHUANG HARRY HAK-LAY
3 patentsUS8890260B2Nov 18, 2014
Polysilicon design for replacement gate technology
CHUANG HARRY HAK-LAY14 citations92
US8183644B1May 22, 2012
Metal gate structure of a CMOS semiconductor device
CHUANG HARRY HAK-LAY27 citations92
US8524570B2Sep 3, 2013
Method and apparatus for improving gate contact
CHUANG HARRY HAK-LAY5 citations84
NG JIN-AUN
2 patentsTEO LEE-WEE
2 patentsZHU MING
2 patentsCHUANG HAK-LAY
2 patentsCHEN PO-NIEN
1 patentTAIWAM SEMICONDUCTOR MFG COMPANY LTD
1 patentShowing the top 50 of 172 patents by PatentIndex Score.