P

Inventor

YOUNG BAO-RU

TW172 patents
⚠️ This page may combine multiple inventors who share the name “YOUNG BAO-RU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

25 patents
US10079289B2Sep 18, 2018

Metal gate structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US10971588B2Apr 6, 2021

Semiconductor device including FinFET with self-align contact

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10867101B1Dec 15, 2020

Leakage reduction between two transistor devices on a same continuous fin

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10515957B2Dec 24, 2019

Semiconductor device having fins

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10515850B2Dec 24, 2019

Method and IC design with non-linear power rails

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10354997B2Jul 16, 2019

Method for manufacturing semiconductor device with replacement gates

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10340348B2Jul 2, 2019

Method of manufacturing finFETs with self-align contacts

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10204202B2Feb 12, 2019

Dummy fin cell placement in an integrated circuit layout

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10141296B2Nov 27, 2018

Dummy fin cell placement in an integrated circuit layout

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9865589B1Jan 9, 2018

System and method of fabricating ESD FinFET with improved metal landing in the drain

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9773879B2Sep 26, 2017

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9508721B2Nov 29, 2016

Metal gate structure of a CMOS semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10276445B2Apr 30, 2019

Leakage reduction methods and structures thereof

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11855073B2Dec 26, 2023

ESD structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10854512B2Dec 1, 2020

Method and IC design with non-linear power rails

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658492B2May 19, 2020

Polysilicon design for replacement gate technology

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522634B2Dec 31, 2019

Finfet with self-aligned source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10403736B2Sep 3, 2019

Polysilicon design for replacement gate technology

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276559B2Apr 30, 2019

System and method of fabricating ESD FinFET with improved metal landing in the drain

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10236220B1Mar 19, 2019

Fin field-effect transistor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10164034B2Dec 25, 2018

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9865510B2Jan 9, 2018

Device and methods for high-K and metal gate slacks

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9859364B1Jan 2, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9679817B2Jun 13, 2017

Semiconductor structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9412841B2Aug 9, 2016

Method of fabricating a transistor using contact etch stop layers

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

TAIWAN SEMICONDUCTOR MFG

12 patents

CHUANG HARRY HAK-LAY

3 patents

NG JIN-AUN

2 patents

TEO LEE-WEE

2 patents

ZHU MING

2 patents

CHUANG HAK-LAY

2 patents

CHEN PO-NIEN

1 patent

TAIWAM SEMICONDUCTOR MFG COMPANY LTD

1 patent

Showing the top 50 of 172 patents by PatentIndex Score.