Inventor
CHANG YUNG FENG
TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHANG YUNG FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS9865589B1Jan 9, 2018
System and method of fabricating ESD FinFET with improved metal landing in the drain
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11855073B2Dec 26, 2023
ESD structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276718B2Apr 30, 2019
FinFET having a relaxation prevention anchor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276559B2Apr 30, 2019
System and method of fabricating ESD FinFET with improved metal landing in the drain
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10943054B2Mar 9, 2021
Integrated circuit layouts with line-end extensions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10803227B2Oct 13, 2020
Integrated circuit layouts with line-end extensions
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12520597B2Jan 6, 2026
Integrated circuit structure having tap cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12353815B2Jul 8, 2025
Method for chip integration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336250B2Jun 17, 2025
Semiconductor device structure and method for forming the semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12288784B2Apr 29, 2025
Semiconductor structures having wells with protruding sections for pickup cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12255201B2Mar 18, 2025
ESD structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199087B2Jan 14, 2025
Dummy poly layout for high density devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094872B2Sep 17, 2024
Capacitor in nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948935B2Apr 2, 2024
Method of forming integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11881477B2Jan 23, 2024
Dummy poly layout for high density devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721687B2Aug 8, 2023
Semiconductor structures having wells with protruding sections for pickup cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532607B2Dec 20, 2022
ESD structure and semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527527B2Dec 13, 2022
Tap cell, integrated circuit structure and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11507725B2Nov 22, 2022
Integrated circuit layouts with line-end extensions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11482518B2Oct 25, 2022
Semiconductor structures having wells with protruding sections for pickup cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177382B2Nov 16, 2021
FinFET having a relaxation prevention anchor and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004842B2May 11, 2021
System and method of fabricating ESD FinFET with improved metal landing in the drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12525550B2Jan 13, 2026
Seal ring for semiconductor device with gate-all-around transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12205907B2Jan 21, 2025
Seal ring structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12073166B2Aug 27, 2024
Method and structure for mandrel patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12068318B2Aug 20, 2024
Method of forming epitaxial features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11855081B2Dec 26, 2023
Method of forming epitaxial features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12471343B2Nov 11, 2025
Gate isolation features in semiconductor devices and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522681B2Dec 31, 2019
Method of forming a FinFET having a relaxation prevention anchor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10453837B2Oct 22, 2019
System and method of fabricating ESD finFET with improved metal landing in the drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12349440B2Jul 1, 2025
Seal ring patterns
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12288783B2Apr 29, 2025
Integrated standard cell structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12484299B2Nov 25, 2025
Integrated circuit structure with gate structures on grids and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47