Inventor
EOM YOON-JOO
KR18 patents
⚠️ This page may combine multiple inventors who share the name “EOM YOON-JOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS10255969B2Apr 9, 2019
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD44 citations96
US10361699B2Jul 23, 2019
Memory modules, memory systems including the same, and methods of calibrating multi-die impedance of the memory modules
SAMSUNG ELECTRONICS CO LTD20 citations83
US10062430B2Aug 28, 2018
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD4 citations82
US9899075B2Feb 20, 2018
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD5 citations82
US11195571B2Dec 7, 2021
Memory device and method with data input
SAMSUNG ELECTRONICS CO LTD2 citations72
US9183902B2Nov 10, 2015
Input data alignment circuit and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US12154616B2Nov 26, 2024
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11862234B2Jan 2, 2024
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US9209764B2Dec 8, 2015
Small signal receiver and integrated circuit including the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US11721391B2Aug 8, 2023
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations61
US11443794B2Sep 13, 2022
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations61
US10666467B2May 26, 2020
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD1 citations61
US9196325B2Nov 24, 2015
Integrated circuit with on die termination and reference voltage generation and methods of using the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US9030262B2May 12, 2015
Input receiver circuit having single-to-differential amplifier, and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US8934317B2Jan 13, 2015
Semiconductor memory devices having internal clock signals and memory systems including such memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9355706B2May 31, 2016
Output circuit for implementing high speed data transmition
SAMSUNG ELECTRONICS CO LTD0 citations51
US9742355B2Aug 22, 2017
Buffer circuit robust to variation of reference voltage signal
SAMSUNG ELECTRONICS CO LTD0 citations41