P

Inventor

BAE SEUNGJUN

KR22 patents
⚠️ This page may combine multiple inventors who share the name “BAE SEUNGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US8055930B2Nov 8, 2011

Internal clock signal generating circuits including frequency division and phase control and related methods, systems, and devices

SAMSUNG ELECTRONICS CO LTD29 citations90
US10692561B2Jun 23, 2020

Semiconductor memory device, memory system, and refresh method thereof

SAMSUNG ELECTRONICS CO LTD7 citations82
US7778097B2Aug 17, 2010

AC coupling circuits including resistive feedback and related methods and devices

SAMSUNG ELECTRONICS CO LTD11 citations82
US11195571B2Dec 7, 2021

Memory device and method with data input

SAMSUNG ELECTRONICS CO LTD2 citations72
US11056158B2Jul 6, 2021

Memory device and divided clock correction method thereof

SAMSUNG ELECTRONICS CO LTD2 citations72
US10453504B2Oct 22, 2019

Memory device and divided clock correction method thereof

SAMSUNG ELECTRONICS CO LTD4 citations72
US10969420B2Apr 6, 2021

Test circuits for monitoring NBTI or PBTI

SAMSUNG ELECTRONICS CO LTD2 citations71
US10236045B2Mar 19, 2019

Semiconductor memory device having detection clock patterns phase-inverted from each other and detection clock generating method thereof

SAMSUNG ELECTRONICS CO LTD4 citations71
US12154616B2Nov 26, 2024

Memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations62
US11862234B2Jan 2, 2024

Memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations62
US12301236B2May 13, 2025

Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal

SAMSUNG ELECTRONICS CO LTD0 citations61
US10666467B2May 26, 2020

Memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD1 citations61
US7903499B2Mar 8, 2011

Integrated circuit memory devices including delayed clock inputs for input/output buffers and related systems and methods

SAMSUNG ELECTRONICS CO LTD4 citations61
US12483243B2Nov 25, 2025

Semiconductor memory device performing recursive ZQ calibration and calibration method thereof

SAMSUNG ELECTRONICS CO LTD0 citations58
US12394452B2Aug 19, 2025

ZQ calibration circuit for multiple interfaces

SAMSUNG ELECTRONICS CO LTD0 citations57
US10777246B2Sep 15, 2020

Semiconductor memory device and detection clock pattern generating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations51
US10734043B2Aug 4, 2020

Memory system for adjusting clock frequency

SAMSUNG ELECTRONICS CO LTD0 citations51
US10593387B2Mar 17, 2020

Semiconductor memory device and detection clock pattern generating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations51
US9355706B2May 31, 2016

Output circuit for implementing high speed data transmition

SAMSUNG ELECTRONICS CO LTD0 citations51
US8026749B2Sep 27, 2011

Phase locked loop circuit, method of operating phase locked loop circuit and semiconductor memory device including phase locked loop circuit

SAMSUNG ELECTRONICS CO LTD1 citations45

BAE SEUNGJUN

1 patent

SOHN YOUNGSOO

1 patent