Inventor
BAE SEUNGJUN
KR22 patents
⚠️ This page may combine multiple inventors who share the name “BAE SEUNGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS8055930B2Nov 8, 2011
Internal clock signal generating circuits including frequency division and phase control and related methods, systems, and devices
SAMSUNG ELECTRONICS CO LTD29 citations90
US10692561B2Jun 23, 2020
Semiconductor memory device, memory system, and refresh method thereof
SAMSUNG ELECTRONICS CO LTD7 citations82
US7778097B2Aug 17, 2010
AC coupling circuits including resistive feedback and related methods and devices
SAMSUNG ELECTRONICS CO LTD11 citations82
US11195571B2Dec 7, 2021
Memory device and method with data input
SAMSUNG ELECTRONICS CO LTD2 citations72
US11056158B2Jul 6, 2021
Memory device and divided clock correction method thereof
SAMSUNG ELECTRONICS CO LTD2 citations72
US10453504B2Oct 22, 2019
Memory device and divided clock correction method thereof
SAMSUNG ELECTRONICS CO LTD4 citations72
US10969420B2Apr 6, 2021
Test circuits for monitoring NBTI or PBTI
SAMSUNG ELECTRONICS CO LTD2 citations71
US10236045B2Mar 19, 2019
Semiconductor memory device having detection clock patterns phase-inverted from each other and detection clock generating method thereof
SAMSUNG ELECTRONICS CO LTD4 citations71
US12154616B2Nov 26, 2024
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11862234B2Jan 2, 2024
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12301236B2May 13, 2025
Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal
SAMSUNG ELECTRONICS CO LTD0 citations61
US10666467B2May 26, 2020
Memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD1 citations61
US7903499B2Mar 8, 2011
Integrated circuit memory devices including delayed clock inputs for input/output buffers and related systems and methods
SAMSUNG ELECTRONICS CO LTD4 citations61
US12483243B2Nov 25, 2025
Semiconductor memory device performing recursive ZQ calibration and calibration method thereof
SAMSUNG ELECTRONICS CO LTD0 citations58
US12394452B2Aug 19, 2025
ZQ calibration circuit for multiple interfaces
SAMSUNG ELECTRONICS CO LTD0 citations57
US10777246B2Sep 15, 2020
Semiconductor memory device and detection clock pattern generating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US10734043B2Aug 4, 2020
Memory system for adjusting clock frequency
SAMSUNG ELECTRONICS CO LTD0 citations51
US10593387B2Mar 17, 2020
Semiconductor memory device and detection clock pattern generating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US9355706B2May 31, 2016
Output circuit for implementing high speed data transmition
SAMSUNG ELECTRONICS CO LTD0 citations51
US8026749B2Sep 27, 2011
Phase locked loop circuit, method of operating phase locked loop circuit and semiconductor memory device including phase locked loop circuit
SAMSUNG ELECTRONICS CO LTD1 citations45