Inventor
GREENLEE JORDAN D
US123 patents
⚠️ This page may combine multiple inventors who share the name “GREENLEE JORDAN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
43 patentsUS10283524B1May 7, 2019
Methods of filling horizontally-extending openings of integrated assemblies
MICRON TECHNOLOGY INC17 citations94
US10170493B1Jan 1, 2019
Assemblies having vertically-stacked conductive structures
MICRON TECHNOLOGY INC13 citations92
US10847367B2Nov 24, 2020
Methods of forming tungsten structures
MICRON TECHNOLOGY INC7 citations81
US12230325B2Feb 18, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC2 citations75
US11805651B2Oct 31, 2023
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC2 citations73
US11715692B2Aug 1, 2023
Microelectronic devices including conductive rails, and related methods
MICRON TECHNOLOGY INC2 citations73
US11705500B2Jul 18, 2023
Assemblies having conductive structures with three or more different materials
MICRON TECHNOLOGY INC2 citations73
US11476332B2Oct 18, 2022
Integrated assemblies, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations73
US11404436B2Aug 2, 2022
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC3 citations73
US11342265B2May 24, 2022
Apparatus including a dielectric material in a central portion of a contact via, and related methods, memory devices and electronic systems
MICRON TECHNOLOGY INC3 citations73
US11315877B2Apr 26, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC2 citations73
US11056505B2Jul 6, 2021
Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations73
US10957775B2Mar 23, 2021
Assemblies having conductive structures with three or more different materials
MICRON TECHNOLOGY INC3 citations73
US10573661B2Feb 25, 2020
Methods of filling horizontally-extending openings of integrated assemblies
MICRON TECHNOLOGY INC2 citations73
US10361214B2Jul 23, 2019
Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures
MICRON TECHNOLOGY INC3 citations73
US11393756B2Jul 19, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC5 citations72
US10361216B2Jul 23, 2019
Methods used in forming an array of elevationally-extending transistors
MICRON TECHNOLOGY INC2 citations72
US11646206B2May 9, 2023
Methods of forming tungsten structures
MICRON TECHNOLOGY INC2 citations71
US11791268B2Oct 17, 2023
Tungsten structures and methods of forming the structures
MICRON TECHNOLOGY INC2 citations70
US11244903B2Feb 8, 2022
Tungsten structures and methods of forming the structures
MICRON TECHNOLOGY INC4 citations70
US11127899B2Sep 21, 2021
Conductive interconnects suitable for utilization in integrated assemblies, and methods of forming conductive interconnects
MICRON TECHNOLOGY INC3 citations70
US12245426B2Mar 4, 2025
Staircase formation in a memory array
MICRON TECHNOLOGY INC1 citations64
US12462852B2Nov 4, 2025
Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration
MICRON TECHNOLOGY INC0 citations63
US12456685B2Oct 28, 2025
Microelectronic devices comprising a boron-containing material, and related electronic systems and methods
MICRON TECHNOLOGY INC0 citations63
US12426266B2Sep 23, 2025
Memory arrays comprising strings of memory cells with conductive islands
MICRON TECHNOLOGY INC0 citations63
US12058861B2Aug 6, 2024
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations63
US12041769B2Jul 16, 2024
Methods of forming microelectronic devices
MICRON TECHNOLOGY INC0 citations63
US11963359B2Apr 16, 2024
Integrated assemblies, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations63
US11910606B2Feb 20, 2024
Integrated assemblies comprising conductive levels having two different metal-containing structures laterally adjacent one another, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations63
US11856764B2Dec 26, 2023
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations63
US11812610B2Nov 7, 2023
Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods
MICRON TECHNOLOGY INC0 citations63
US11716848B2Aug 1, 2023
Integrated assemblies, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations63
US11562773B2Jan 24, 2023
Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration
MICRON TECHNOLOGY INC0 citations63
US11515320B2Nov 29, 2022
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC0 citations63
US11417682B2Aug 16, 2022
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations63
US11411021B2Aug 9, 2022
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations63
US11302707B2Apr 12, 2022
Integrated assemblies comprising conductive levels having two different metal-containing structures laterally adjacent one another, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC1 citations63
US11024644B2Jun 1, 2021
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations63
US12543559B2Feb 3, 2026
Memory device including control gates having tungsten structure
MICRON TECHNOLOGY INC0 citations62
US12525534B2Jan 13, 2026
Memory devices including conductive rails, and related methods and electronic systems
MICRON TECHNOLOGY INC0 citations62
US12520493B2Jan 6, 2026
Microelectronic devices including cap structures, and related electronic systems and methods
MICRON TECHNOLOGY INC0 citations62
US12507405B2Dec 23, 2025
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US12426269B2Sep 23, 2025
Barrier structure for preventing etching to control circuitry
MICRON TECHNOLOGY INC0 citations62
LODESTAR LICENSING GROUP LLC
7 patentsUS12002759B2Jun 4, 2024
Apparatuses including a conductive contact including a dielectric material surrounded by a conductive material
LODESTAR LICENSING GROUP LLC2 citations73
US12464718B2Nov 4, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations63
US12453089B2Oct 21, 2025
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations63
US12368101B2Jul 22, 2025
Apparatuses including interconnect structures including dielectric material surrounded by conductive material, and related memory devices
LODESTAR LICENSING GROUP LLC0 citations63
US12274063B2Apr 8, 2025
Integrated assemblies and methods of forming integrated assemblies
LODESTAR LICENSING GROUP LLC0 citations63
US12185544B2Dec 31, 2024
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
LODESTAR LICENSING GROUP LLC0 citations63
US11923415B2Mar 5, 2024
Integrated assemblies, and methods of forming integrated assemblies
LODESTAR LICENSING GROUP LLC0 citations63
Showing the top 50 of 123 patents by PatentIndex Score.