Inventor

MCTEER EVERETT A

US43 patents

⚠️ This page may combine multiple inventors who share the name “MCTEER EVERETT A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MCTEER EVERETT A

MICRON TECHNOLOGY INC

Methods of filling horizontally-extending openings of integrated assemblies

Assemblies having vertically-stacked conductive structures

Antireflective coating and wiring line stack

Methods of forming memory cells and memory devices

Integrated assemblies and methods of forming integrated assemblies

Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Antireflective coating and field emission display device, semiconductor device and wiring line comprising same

Method of forming wire line

Assemblies having conductive structures with three or more different materials

Apparatus including a dielectric material in a central portion of a contact via, and related methods, memory devices and electronic systems

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Assemblies having conductive structures with three or more different materials

Methods of filling horizontally-extending openings of integrated assemblies

Methods of forming memory cells and semiconductor devices

Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Microelectronic devices, memory devices, and electronic systems

Microelectronic devices and memory devices including conductive levels having varying compositions

Memories having vertically stacked conductive filled structures

Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material

Microelectronic devices including staircase structures, and related memory devices and electronic systems

Semiconductor devices comprising threshold switching materials

Microelectronic devices including conductive levels having varying compositions, and related memory devices, electronic systems, and methods

Semiconductor devices and electronic systems including an etch stop material, and related methods

Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material

Integrated structures with conductive regions having at least one element from group 2 of the periodic table

Methods of forming integrated assemblies

Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars

Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods

Transistor and memory circuitry comprising strings of memory cells

Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures

Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars

Assemblies having vertically-stacked conductive structures

Integrated assemblies and methods of forming integrated assemblies

Assemblies having vertically-extending structures

Methods used in forming memory arrays having strings of memory cells

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

Conductive interconnects

LODESTAR LICENSING GROUP LLC

Apparatuses including a conductive contact including a dielectric material surrounded by a conductive material

Apparatuses including interconnect structures including dielectric material surrounded by conductive material, and related memory devices

Assemblies having conductive structures with three or more different materials

HU YONGJUN JEFF

Forming memory using high power impulse magnetron sputtering