Inventor
KO SANG KI
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KO SANG KI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SENIC INC
17 patentsUS11359306B2Jun 14, 2022
Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more
SENIC INC2 citations71
US11859305B2Jan 2, 2024
Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal
SENIC INC0 citations62
US11846038B2Dec 19, 2023
Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
SENIC INC0 citations62
US11225730B2Jan 18, 2022
Method for producing ingot, raw material for ingot growth, and method for preparing the raw material
SENIC INC1 citations62
US11856678B2Dec 26, 2023
Method of measuring a graphite article, apparatus for a measurement, and ingot growing system
SENIC INC0 citations61
US11708644B2Jul 25, 2023
Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom
SENIC INC1 citations61
US11289576B2Mar 29, 2022
Wafer and method of manufactruring wafer
SENIC INC0 citations61
US11646209B2May 9, 2023
Method of cleaning wafer and wafer with reduced impurities
SENIC INC0 citations60
US11566344B2Jan 31, 2023
Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer
SENIC INC0 citations60
US11474012B2Oct 18, 2022
Method for preparing silicon carbide wafer and silicon carbide wafer
SENIC INC0 citations60
US11466383B2Oct 11, 2022
Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer
SENIC INC0 citations51
US11268209B2Mar 8, 2022
Seed crystal including protective film including a first layer with first filler and second layer with second filler
SENIC INC0 citations51
US11795572B2Oct 24, 2023
Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal
SENIC INC0 citations50
US11591711B2Feb 28, 2023
Method and system for producing silicon carbide ingot
SENIC INC0 citations50
US11447889B2Sep 20, 2022
Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer
SENIC INC0 citations50
US11339497B2May 24, 2022
Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby
SENIC INC0 citations50
US11939698B2Mar 26, 2024
Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby
SENIC INC0 citations49
KOREA ELECTRONICS TECHNOLOGY
3 patentsUS11741755B2Aug 29, 2023
Method and apparatus for recognizing sign language or gesture using 3D EDM
KOREA ELECTRONICS TECHNOLOGY9 citations81
US11482134B2Oct 25, 2022
Method, apparatus, and terminal for providing sign language video reflecting appearance of conversation partner
KOREA ELECTRONICS TECHNOLOGY3 citations68
US10846568B2Nov 24, 2020
Deep learning-based automatic gesture recognition method and system
KOREA ELECTRONICS TECHNOLOGY1 citations61
SKC CO LTD
2 patentsUS11078599B2Aug 3, 2021
Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatus
SKC CO LTD3 citations72
US10822720B1Nov 3, 2020
Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
SKC CO LTD6 citations72