Inventor · disambiguated record
Francois Neuilly
Also filed as: NEUILLY FRANCOIS · NEUILLY FRANCOIS IGOR · NEUILLY FRANÇOIS
8 granted patents·3 pending applications·29 citations·filing 2004–2022
82Inventor score
Files withNXP BV7IPDIA1LUXEMBOURG INST SCIENCE & TECH LIST1NEUILLY FRANCOIS1VAN SCHAIJK ROBERTUS T F1
Top patents by PatentIndex Score
11 records- 0178US8026146B2Method of manufacturing a bipolar transistorNXP BV·Filed 2007·Granted Sep 27, 2011·9 cites·10 claims
- 0273US7932156B2Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layerNXP BV·Filed 2006·Granted Apr 26, 2011·5 cites·6 claims
- 0367US7906403B2Bipolar transistor and method of fabricating the sameNXP BV·Filed 2006·Granted Mar 15, 2011·5 cites·11 claims
- 0460US7786014B2Electronic device and method for making the sameIPDIA·Filed 2007·Granted Aug 31, 2010·4 cites·17 claims
- 0558US8227847B2Ultra high density capacity comprising pillar-shaped capacitors formed on both sides of a substrateNEUILLY FRANCOIS·Filed 2009·Granted Jul 24, 2012·5 cites·6 claims
- 0653US8525250B2SONOS memory device with reduced short-channel effectsVAN SCHAIJK ROBERTUS T F·Filed 2006·Granted Sep 3, 2013·1 cites·27 claims
- 0750US2025075796A1Connector with pressurized sealing chamber for process tube of a process furnaceLUXEMBOURG INST SCIENCE & TECH LIST·Filed 2022·Application pending·0 cites
- 0838US7605027B2Method of fabricating a bipolar transistorNXP BV·Filed 2006·Granted Oct 20, 2009·0 cites·6 claims
- 0937US2011101531A1Thermo-mechanical stress in semiconductor wafersNXP BV·Filed 2009·Application pending·0 cites
- 1036US7566919B2Method to reduce seedlayer topography in BICMOS processNXP BV·Filed 2004·Granted Jul 28, 2009·0 cites·20 claims
- 1136US2009200577A1Semiconductor device and method of manufacturing such a deviceNXP BV·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →