P

Inventor

KANG SEO-GOO

KR16 patents

Patents

16 patents
US10566345B2Feb 18, 2020

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD14 citations84
US10847537B2Nov 24, 2020

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US10714495B2Jul 14, 2020

Three-dimensional semiconductor memory devices including through-interconnection structures

SAMSUNG ELECTRONICS CO LTD3 citations71
US10707231B2Jul 7, 2020

Semiconductor memory device having vertical supporter penetrating the gate stack structure and through dielectric pattern

SAMSUNG ELECTRONICS CO LTD5 citations71
US12310026B2May 20, 2025

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12200936B2Jan 14, 2025

3D semiconductor memory device and method of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11963358B2Apr 16, 2024

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11963357B2Apr 16, 2024

Nonvolatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11856778B2Dec 26, 2023

3D semiconductor memory device and method of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11581331B2Feb 14, 2023

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11563028B2Jan 24, 2023

Nonvolatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11502101B2Nov 15, 2022

3D semiconductor memory device and method of fabricating same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11211402B2Dec 28, 2021

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations61
US11864384B2Jan 2, 2024

Method for fabricating nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations59
US11233065B2Jan 25, 2022

Nonvolatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US12402315B2Aug 26, 2025

Memory device with vertically stacked semiconductor structures

SAMSUNG ELECTRONICS CO LTD0 citations49