Inventor
SUGAHARA KAZUYUKI
JP53 patents
⚠️ This page may combine multiple inventors who share the name “SUGAHARA KAZUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
34 patentsUS5355022AOct 11, 1994
Stacked-type semiconductor device
MITSUBISHI ELECTRIC CORP347 citations99
US5006913AApr 9, 1991
Stacked type semiconductor device
MITSUBISHI ELECTRIC CORP305 citations99
US5504376AApr 2, 1996
Stacked-type semiconductor device
MITSUBISHI ELECTRIC CORP84 citations96
US4845537AJul 4, 1989
Vertical type MOS transistor and method of formation thereof
MITSUBISHI ELECTRIC CORP101 citations96
US4694143ASep 15, 1987
Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer
MITSUBISHI ELECTRIC CORP72 citations96
US5736438AApr 7, 1998
Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same
MITSUBISHI ELECTRIC CORP46 citations95
US5514880AMay 7, 1996
Field effect thin-film transistor for an SRAM with reduced standby current
MITSUBISHI ELECTRIC CORP56 citations95
US5528054AJun 18, 1996
Semiconductor device having active region in semiconductor layer on insulator layer and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations93
US5480826AJan 2, 1996
Method of manufacturing semiconductor device having a capacitor
MITSUBISHI ELECTRIC CORP40 citations93
US5214001AMay 25, 1993
Method of manufacturing semiconductor device having planar single crystal semiconductor surface
MITSUBISHI ELECTRIC CORP28 citations93
US7176491B2Feb 13, 2007
Semiconductor device
MITSUBISHI ELECTRIC CORP6 citations74
US5446301AAug 29, 1995
Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same
MITSUBISHI ELECTRIC CORP6 citations74
US5381029AJan 10, 1995
Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same
MITSUBISHI ELECTRIC CORP15 citations74
US5338388AAug 16, 1994
Method of forming single-crystal semiconductor films
MITSUBISHI ELECTRIC CORP7 citations74
US5315140AMay 24, 1994
Semiconductor device having a polysilicon capacitor with large grain diameter
MITSUBISHI ELECTRIC CORP11 citations74
US5094714AMar 10, 1992
Wafer structure for forming a semiconductor single crystal film
MITSUBISHI ELECTRIC CORP7 citations74
US4953125AAug 28, 1990
Semiconductor memory device having improved connecting structure of bit line and memory cell
MITSUBISHI ELECTRIC CORP18 citations74
US4787740ANov 29, 1988
Apparatus and method for determining crystal orientation
MITSUBISHI ELECTRIC CORP7 citations74
US4661167AApr 28, 1987
Method for manufacturing a monocrystalline semiconductor device
MITSUBISHI ELECTRIC CORP10 citations74
US5070030ADec 3, 1991
Method of making an oxide isolated, lateral bipolar transistor
MITSUBISHI ELECTRIC CORP8 citations73
US4990991AFeb 5, 1991
Bipolar transistor and method of manufacturing the same
MITSUBISHI ELECTRIC CORP6 citations73
US11063122B2Jul 13, 2021
Silicon carbide semiconductor device and power conversion device
MITSUBISHI ELECTRIC CORP2 citations71
US10707146B2Jul 7, 2020
Semiconductor device and method for manufacturing same, for releaved stress and high heat conductivity
MITSUBISHI ELECTRIC CORP2 citations71
US9842738B2Dec 12, 2017
Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP2 citations70
US7396707B2Jul 8, 2008
Fabrication method of a semiconductor device
MITSUBISHI ELECTRIC CORP4 citations63
US7262433B2Aug 28, 2007
Semiconductor device
MITSUBISHI ELECTRIC CORP6 citations63
US6841879B2Jan 11, 2005
Semiconductor device
MITSUBISHI ELECTRIC CORP4 citations63
US5413968AMay 9, 1995
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP4 citations63
US7553778B2Jun 30, 2009
Method for producing a semiconductor device including crystallizing an amphorous semiconductor film
MITSUBISHI ELECTRIC CORP2 citations62
US12322605B2Jun 3, 2025
Semiconductor device and method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP0 citations61
US4778269AOct 18, 1988
Method for determining crystal orientation
MITSUBISHI ELECTRIC CORP1 citations52
US11158511B2Oct 26, 2021
Semiconductor device and power converter including a copper film with a small grain size stress relaxtion layer
MITSUBISHI ELECTRIC CORP0 citations49
US10276502B2Apr 30, 2019
Semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP0 citations49
US7642605B2Jan 5, 2010
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations42
AGENCY IND SCIENCE TECHN
4 patentsUS4822752AApr 18, 1989
Process for producing single crystal semiconductor layer and semiconductor device produced by said process
AGENCY IND SCIENCE TECHN113 citations96
US5371381ADec 6, 1994
Process for producing single crystal semiconductor layer and semiconductor device produced by said process
AGENCY IND SCIENCE TECHN15 citations74
US4714684ADec 22, 1987
Method of forming single crystal layer on dielectric layer by controlled rapid heating
AGENCY IND SCIENCE TECHN11 citations74
US5401683AMar 28, 1995
Method of manufacturing a multi-layered semiconductor substrate
AGENCY IND SCIENCE TECHN2 citations63
KOZO IIZUKA DIRECTOR GENERAL A
3 patentsUS4870031ASep 26, 1989
Method of manufacturing a semiconductor device
KOZO IIZUKA DIRECTOR GENERAL A101 citations96
US5128732AJul 7, 1992
Stacked semiconductor device
KOZO IIZUKA DIRECTOR GENERAL A31 citations92
US4861418AAug 29, 1989
Method of manufacturing semiconductor crystalline layer
KOZO IIZUKA DIRECTOR GENERAL A13 citations73
YAMAHA MOTOR CO LTD
3 patentsKOBAYASHI PHARMA
2 patentsOTSUKA CHEMICAL CO LTD
2 patentsGLYTECH INC
1 patentSUGAHARA KAZUYUKI
1 patentShowing the top 50 of 53 patents by PatentIndex Score.