Inventor
SONG MING-YUAN
TW21 patents
Patents
21 patentsUS11342015B1May 24, 2022
Memory device and memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11716859B2Aug 1, 2023
Memory device, semiconductor device, and method of fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US11968844B2Apr 23, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11456100B2Sep 27, 2022
MRAM stacks, MRAM devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11145347B1Oct 12, 2021
Memory device and memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12514128B2Dec 30, 2025
Magnetic memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356870B2Jul 8, 2025
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12334238B2Jun 17, 2025
MRAM stacks, MRAM devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324165B2Jun 3, 2025
Methods of writing and forming memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12256555B2Mar 18, 2025
Memory device, semiconductor device, and method of fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12256646B2Mar 18, 2025
Memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11903326B2Feb 13, 2024
SOT-MRAM cell in high density applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862373B2Jan 2, 2024
MRAM stacks and memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11765984B2Sep 19, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11721376B2Aug 8, 2023
Memory device, operation method of memory device and operation method of memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538858B2Dec 27, 2022
Memory device, method of forming the same, and memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469371B2Oct 11, 2022
SOT-MRAM cell in high density applications
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12057153B2Aug 6, 2024
Memory device with tunable probabilistic state
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11521664B2Dec 6, 2022
Memory device with tunable probabilistic state
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11522009B2Dec 6, 2022
MRAM device having self-aligned shunting layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12406711B2Sep 2, 2025
Circuit with logical function of computing-in- memory, memory device, and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51