Inventor
Nayyar Neha
US11 patents
⚠️ This page may combine multiple inventors who share the name “Nayyar Neha”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES US INC
5 patentsUS12356675B2Jul 8, 2025
Planar transistor device comprising at least one layer of a two-dimensional (2D) material
GLOBALFOUNDRIES US INC0 citations60
US11581430B2Feb 14, 2023
Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devices
GLOBALFOUNDRIES US INC0 citations60
US11239087B2Feb 1, 2022
Fully depleted devices with slots in active regions
GLOBALFOUNDRIES US INC0 citations60
US11177182B2Nov 16, 2021
Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devices
GLOBALFOUNDRIES US INC1 citations60
US11094791B1Aug 17, 2021
Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices
GLOBALFOUNDRIES US INC0 citations50
GLOBALFOUNDRIES INC
4 patentsUS10691862B2Jun 23, 2020
Layouts for connecting contacts with metal tabs or vias
GLOBALFOUNDRIES INC0 citations50
US10186524B2Jan 22, 2019
Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions
GLOBALFOUNDRIES INC0 citations50
US9941301B1Apr 10, 2018
Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions
GLOBALFOUNDRIES INC0 citations50
US10497576B1Dec 3, 2019
Devices with slotted active regions
GLOBALFOUNDRIES INC0 citations49