Inventor
PRABHU MANJUNATHA
US29 patents
⚠️ This page may combine multiple inventors who share the name “PRABHU MANJUNATHA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
15 patentsUS10083952B2Sep 25, 2018
Diode-triggered schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control
GLOBALFOUNDRIES INC9 citations84
US10529704B1Jan 7, 2020
Auxiliary gate antenna diodes
GLOBALFOUNDRIES INC7 citations82
US10115718B2Oct 30, 2018
Method, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection
GLOBALFOUNDRIES INC2 citations73
US9679888B1Jun 13, 2017
ESD device for a semiconductor structure
GLOBALFOUNDRIES INC6 citations73
US10373946B2Aug 6, 2019
Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control
GLOBALFOUNDRIES INC1 citations62
US10790276B2Sep 29, 2020
Methods, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection
GLOBALFOUNDRIES INC0 citations52
US10147715B2Dec 4, 2018
Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors
GLOBALFOUNDRIES INC0 citations52
US9653454B1May 16, 2017
Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors
GLOBALFOUNDRIES INC1 citations52
US9601486B2Mar 21, 2017
ESD snapback based clamp for finFET
GLOBALFOUNDRIES INC0 citations52
US9349718B2May 24, 2016
ESD snapback based clamp for finFET
GLOBALFOUNDRIES INC0 citations52
US10741542B2Aug 11, 2020
Transistors patterned with electrostatic discharge protection and methods of fabrication
GLOBALFOUNDRIES INC0 citations51
US10068895B2Sep 4, 2018
Transistors patterned with electrostatic discharge protection and methods of fabrication
GLOBALFOUNDRIES INC0 citations51
US9500703B2Nov 22, 2016
Semiconductor structure having test device
GLOBALFOUNDRIES INC0 citations51
US9343590B2May 17, 2016
Planar semiconductor ESD device and method of making same
GLOBALFOUNDRIES INC0 citations51
US10579774B2Mar 3, 2020
Integrated circuit (IC) design systems and methods using single-pin imaginary devices
GLOBALFOUNDRIES INC0 citations45
GLOBALFOUNDRIES US INC
6 patentsUS11610843B2Mar 21, 2023
Well tap for an integrated circuit product and methods of forming such a well tap
GLOBALFOUNDRIES US INC2 citations71
US12046670B2Jul 23, 2024
Semiconductor device having a gate contact over an active region
GLOBALFOUNDRIES US INC0 citations61
US12356675B2Jul 8, 2025
Planar transistor device comprising at least one layer of a two-dimensional (2D) material
GLOBALFOUNDRIES US INC0 citations60
US11581430B2Feb 14, 2023
Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devices
GLOBALFOUNDRIES US INC0 citations60
US11177182B2Nov 16, 2021
Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devices
GLOBALFOUNDRIES US INC1 citations60
US11094791B1Aug 17, 2021
Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices
GLOBALFOUNDRIES US INC0 citations50
GLOBALFOUNDRIES SG PTE LTD
4 patentsUS9761664B1Sep 12, 2017
Integrated circuits with lateral bipolar transistors and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD9 citations82
US10381826B2Aug 13, 2019
Integrated circuit electrostatic discharge protection
GLOBALFOUNDRIES SG PTE LTD5 citations73
US9741849B1Aug 22, 2017
Integrated circuits resistant to electrostatic discharge and methods for producing the same
GLOBALFOUNDRIES SG PTE LTD3 citations72
US9698139B1Jul 4, 2017
Integrated circuits with electrostatic discharge protection
GLOBALFOUNDRIES SG PTE LTD2 citations71