Inventor
WANG DAVID NIN-KOU
US8 patents
Patents
8 patentsUS6167834B1Jan 2, 2001
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC367 citations99
US5882165AMar 16, 1999
Multiple chamber integrated process system
APPLIED MATERIALS INC789 citations98
US4960488AOct 2, 1990
Reactor chamber self-cleaning process
APPLIED MATERIALS INC529 citations98
USRE36623EMar 21, 2000
Process for PECVD of silicon oxide using TEOS decomposition
APPLIED MATERIALS INC79 citations96
US6020270AFeb 1, 2000
Bomine and iodine etch process for silicon and silicides
APPLIED MATERIALS INC47 citations96
US5871811AFeb 16, 1999
Method for protecting against deposition on a selected region of a substrate
APPLIED MATERIALS INC69 citations96
US5755886AMay 26, 1998
Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
APPLIED MATERIALS INC91 citations96
US5874362AFeb 23, 1999
Bromine and iodine etch process for silicon and silicides
APPLIED MATERIALS INC28 citations90