Inventor
YU CHANG-YEON
KR10 patents
Patents
10 patentsUS10008270B2Jun 26, 2018
Non-volatile memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD8 citations83
US9953703B2Apr 24, 2018
Programming method of non volatile memory device
SAMSUNG ELECTRONICS CO LTD7 citations79
US10593408B2Mar 17, 2020
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10170192B2Jan 1, 2019
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US9818483B2Nov 14, 2017
Row decoder and a memory device having the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10163475B2Dec 25, 2018
Non-volatile memory device having dummy cells and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US9978458B2May 22, 2018
Memory device, memory system, and read/verify operation method of the memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US11961564B2Apr 16, 2024
Nonvolatile memory device with intermediate switching transistors and programming method
SAMSUNG ELECTRONICS CO LTD0 citations50
US11183249B2Nov 23, 2021
Nonvolatile memory device with intermediate switching transistors and programming method
SAMSUNG ELECTRONICS CO LTD0 citations50
US10090045B2Oct 2, 2018
Programming method of non volatile memory device according to program speed of memory cells
SAMSUNG ELECTRONICS CO LTD1 citations48