Inventor
RHEE HWASUNG
KR6 patents
Patents
6 patentsUS10128243B2Nov 13, 2018
Semiconductor device with fin field effect transistors having different separation regions between fins in NMOS and PMOS regions
SAMSUNG ELECTRONICS CO LTD32 citations91
US9082739B2Jul 14, 2015
Semiconductor device having test structure
SAMSUNG ELECTRONICS CO LTD7 citations80
US10847514B2Nov 24, 2020
Semiconductor device with fin field effect transistors
SAMSUNG ELECTRONICS CO LTD2 citations70
US11637065B2Apr 25, 2023
Semiconductor device including via and wiring
SAMSUNG ELECTRONICS CO LTD0 citations55
US11239162B2Feb 1, 2022
Semiconductor device including via and wiring
SAMSUNG ELECTRONICS CO LTD0 citations55
US9337112B2May 10, 2016
Semiconductor device having test structure
SAMSUNG ELECTRONICS CO LTD0 citations48