Inventor
WANG CHUNG S
US12 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHUNG S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VLSI TECHNOLOGY INC
8 patentsUS5631485AMay 20, 1997
ESD and hot carrier resistant integrated circuit structure
VLSI TECHNOLOGY INC46 citations95
US5496751AMar 5, 1996
Method of forming an ESD and hot carrier resistant integrated circuit structure
VLSI TECHNOLOGY INC48 citations95
US5444003AAug 22, 1995
Method and structure for creating a self-aligned bicmos-compatible bipolar transistor with a laterally graded emitter structure
VLSI TECHNOLOGY INC21 citations92
US5411906AMay 2, 1995
Method of fabricating auxiliary gate lightly doped drain (AGLDD) structure with dielectric sidewalls
VLSI TECHNOLOGY INC25 citations92
US5340761AAug 23, 1994
Self-aligned contacts with gate overlapped lightly doped drain (goldd) structure
VLSI TECHNOLOGY INC23 citations91
US5196357AMar 23, 1993
Method of making extended polysilicon self-aligned gate overlapped lightly doped drain structure for submicron transistor
VLSI TECHNOLOGY INC34 citations91
US5227320AJul 13, 1993
Method for producing gate overlapped lightly doped drain (goldd) structure for submicron transistor
VLSI TECHNOLOGY INC20 citations78
US5288652AFeb 22, 1994
BICMOS-compatible method for creating a bipolar transistor with laterally graded emitter structure
VLSI TECHNOLOGY INC15 citations73