Inventor

HAZAMA KATSUKI

JP37 patents

⚠️ This page may combine multiple inventors who share the name “HAZAMA KATSUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAZAMA KATSUKI

NIPPON STEEL CORP

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Data reading method in semiconductor storage device capable of storing three- or multi-valued data in one memory cell

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Semiconductor device with logic rewriting and security protection function

Data carrier, game machine using data carrier, information communication method, information communication, automated travelling control system and storing medium

Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same

Semiconductor device with security protection function, ciphering and deciphering method thereof, and storage medium for storing software therefor

Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof

Semiconductor device including transistor with composite gate structure and transistor with single gate structure and method for manufacturing the same

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

Data reading method in semiconductor storage device capable of storing three- or multi-valued data in one memory cell

Semiconductor storage device for storing three-or multi-valued data in one memory cell

Nonvolatile semiconductor memory device and a method of writing data in the same

Method of manufacturing a semiconductor device, having first and second semiconductor regions with field shield isolation structures and a field oxide film covering a junction between semiconductor regions

Element-to-element interconnection in semiconductor device

Nonvolatile semiconductor memory device having stacked-gate type transistor

Data reading method in semiconductor storage device capable of storing three-or multi-valued data in one memory cell

Method of manufacturing a semiconductor device, having first and second semiconductor regions with field shield isolation structures and a field oxide film covering a junction between semiconductor regions

Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide

PEGRE SEMICONDUCTORS LLC

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

HAZAMA KATSUKI

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

UNITED MICROELECTRONICS CORP

Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof

Game machine and information communication system using data carrier

NIPPON STEEL CORPORAITION

Semiconductor device including transistor with composite gate structure and transistor with single gate structure

PEGRE SEMICONDCUTORS LLC

Device and method for reading data stored in a semiconductor device having multilevel memory cells

PEGRE SEMINCONDUCTORS LLC

System and method for reading data stored in a semiconductor device having multilevel memory cells