Inventor
HSIEH YUNG-CHING
TW16 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH YUNG-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
9 patentsUS11238912B1Feb 1, 2022
Magnetoresistive random-access memory
UNITED MICROELECTRONICS CORP3 citations71
US10651235B1May 12, 2020
2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure
UNITED MICROELECTRONICS CORP4 citations69
US12178052B2Dec 24, 2024
MRAM circuit structure and layout structure
UNITED MICROELECTRONICS CORP1 citations61
US11942130B2Mar 26, 2024
Bottom-pinned spin-orbit torque magnetic random access memory and method of manufacturing the same
UNITED MICROELECTRONICS CORP0 citations61
US11903325B2Feb 13, 2024
Magnetic memory device having shared source line and bit line
UNITED MICROELECTRONICS CORP0 citations61
US11355695B2Jun 7, 2022
Magnetic memory device having shared source line and bit line
UNITED MICROELECTRONICS CORP0 citations61
US10978122B1Apr 13, 2021
Memory including non-volatile cells and current driving circuit
UNITED MICROELECTRONICS CORP0 citations60
US11955154B2Apr 9, 2024
Sense amplifier circuit with temperature compensation
UNITED MICROELECTRONICS CORP0 citations51
US11018185B1May 25, 2021
Layout pattern for magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations49
ETRON TECHNOLOGY INC
5 patentsUS5506815AApr 9, 1996
Reconfigurable multi-user buffer memory particularly for signal processing system
ETRON TECHNOLOGY INC45 citations86
US5801997ASep 1, 1998
Ping-pong boost circuit
ETRON TECHNOLOGY INC7 citations71
US5737271AApr 7, 1998
Semiconductor memory arrays
ETRON TECHNOLOGY INC4 citations62
US5689200ANov 18, 1997
High speed glitch-free transition detection circuit with disable control
ETRON TECHNOLOGY INC6 citations62
US5754479AMay 19, 1998
Distributed bit switch logically interleaved for block write performance
ETRON TECHNOLOGY INC1 citations51